A double trench 4H — SiC MOSFET as an enhanced model of SiC UMOSFET

2017 7th International Symposium on Embedded Computing and System Design (ISED) ◽

10.1109/ised.2017.8303939 ◽

2017 ◽

Author(s):

Alisha Oraon ◽

Shradha Shreya ◽

Renuka Kumari ◽

Aminul Islam

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