RF CMOS fully-integrated heterodyne front-end receivers design technique for 5 GHz applications

2004 ◽  
Author(s):  
R.A. Baki ◽  
M.N. El-Gamal
Keyword(s):  
Rf Cmos ◽  
Design Technique ◽  
Fully Integrated ◽  
Front End ◽  
5 Ghz

A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS

2005 ◽  
Vol 40 (7) ◽  
pp. 1434-1442 ◽  
Author(s):  
D. Linten ◽  
S. Thijs ◽  
M.I. Natarajan ◽  
P. Wambacq ◽  
W. Jeamsaksiri ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Rf Cmos ◽  
Fully Integrated ◽  
Noise Amplifier ◽  
5 Ghz

A Fully Integrated RF CMOS Front-End IC for Connectivity Applications

2016 ◽  
Vol 63 (11) ◽  
pp. 1024-1028 ◽  
Author(s):  
Taehwan Joo ◽  
Dong-Ho Lee ◽  
Songcheol Hong
Keyword(s):  
Rf Cmos ◽  
Fully Integrated ◽  
Front End

scholarly journals An Automatic Offset Calibration Method for Differential Charge-Based Capacitance Measurement

2021 ◽  
Vol 11 (2) ◽  
pp. 22
Author(s):  
Umberto Ferlito ◽  
Alfio Dario Grasso ◽  
Michele Vaiana ◽  
Giuseppe Bruno
Keyword(s):  
Standard Deviation ◽  
Output Voltage ◽  
Process Variations ◽  
Calibration Method ◽  
Capacitance Measurement ◽  
Effective Technique ◽  
Fully Integrated ◽  
Front End ◽  
Novel Method ◽  
On Chip

Charge-Based Capacitance Measurement (CBCM) technique is a simple but effective technique for measuring capacitance values down to the attofarad level. However, when adopted for fully on-chip implementation, this technique suffers output offset caused by mismatches and process variations. This paper introduces a novel method that compensates the offset of a fully integrated differential CBCM electronic front-end. After a detailed theoretical analysis of the differential CBCM topology, we present and discuss a modified architecture that compensates mismatches and increases robustness against mismatches and process variations. The proposed circuit has been simulated using a standard 130-nm technology and shows a sensitivity of 1.3 mV/aF and a 20× reduction of the standard deviation of the differential output voltage as compared to the traditional solution.

A 750 mV Fully Integrated Direct Conversion Receiver Front-End for GSM in 90-nm CMOS

2007 ◽  
Vol 42 (6) ◽  
pp. 1310-1317 ◽  
Author(s):  
Massimo Brandolini ◽  
Marco Sosio ◽  
Francesco Svelto
Keyword(s):  
Direct Conversion ◽  
Fully Integrated ◽  
Front End
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