An efficient adaptive predistorter for nonlinear high power amplifier in satellite communication

2002 ◽  
Author(s):  
Hyun Woo Kang ◽  
Yong Soo Cho ◽  
Dae hee Youn
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Satellite Communication ◽  
High Power Amplifier

scholarly journals Power Efficient GaN HEMT High Power Amplifier Design Operating at 5-7GHz Bandwidth

2020 ◽  
pp. 166-170
Author(s):  
Syed Mudassir Hussain
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Power Efficiency ◽  
Satellite Communication ◽  
Design System ◽  
Passive Element ◽  
Power Efficient ◽  
Power Added Efficiency ◽  
High Power Amplifier ◽  
Simulation Results

For the next generation applications in mobile communication, radar and satellite communication we need the devices that can operate at high frequencies and high power with minimum power consumption. There is a growing importance in the recent years for the development of GaN transistors.This paper presents design of the power efficient GaN based high power amplifier operating in the bandwidth of 5GHz – 7GHz based on a 12 Watt Discrete Power GaN on SiC HEMT from TriQuint. In this manuscript the design of RF power amplifier, its stability, input and output matching impedance and performance for 5-7GHz is presented. Design and simulations of the power amplifier are carried out using Advanced Design System (ADS). Simulation results of device stability, gain and Power Added Efficiency (PAE) shows good accordance with the specifications and parameters of the device.In the design process, for better correlation in measurement and simulation results precision of passive element models are specially considered. In 1 dB compression point for the designed high power amplifier, the experiment and the simulation results show a Power Efficiency of 68%.

scholarly journals Design of high power amplifier based on wilkinson power combiner for wireless communications

2021 ◽  
Vol 23 (1) ◽  
pp. 330
Author(s):  
Tran Van Hoi ◽  
Ngo Thi Lanh
Keyword(s):  
Reflection Coefficient ◽  
Power Amplifier ◽  
Mobile Communications ◽  
High Power ◽  
Satellite Communication ◽  
Oxide Semiconductor ◽  
Design System ◽  
Power Combiner ◽  
Power Added Efficiency ◽  
High Power Amplifier

Thisarticlepresentsthedesign and fabrication ofa high power amplifierbased onwilkinson power combiner. A 45W basic amplifier module isdesigned usinglaterally-diffused metal-oxide semiconductor (LDMOS) fieldeffect transistor (FET) PTFA260451E transistor. Wilkinson power combineris used to combine two input powers toproduce 90W of power. Theproposed power amplifier is researched, designed and optimized usingadvanced design system(ADS) software.Experimental results show that thegain is 11.5 dB greater than at 2.45-3.0GHz frequency band and achieving maximum power gain of 13.5dB at 2.65GHz centre frequency; output power increased to 49.3dBm; Power added efficiency of 62.1% and good impedances matching: input reflection coefficient (S11)<-10dB, output reflection coefficient (S22)<-15dB. The designed amplifier can be used for4G, 5G mobile communications andS-band satellite communication.

An Octave Bandwidth, High PAE, Linear, Class J GaN High Power Amplifier

2012 ◽  
Author(s):  
Kris Skowronski ◽  
Steve Nelson ◽  
Rajesh Mongia ◽  
Howard Sheehan ◽  
Sid Anderson
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Power Amplifier

Effects of nonlinear high power amplifier on the area covered by WiMAX signal

2006 ◽  
Author(s):  
Gorazd Kandus ◽  
Tomaz Javornik ◽  
Igor Jelovcan ◽  
Sreco Plevel
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
High Power Amplifier
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