The Domain Structure and Pyroelectric Properties of (111) Preferred Oriented PLT Thin Films Prepared By RF Magnetron Sputtering

2006 ◽  
Author(s):  
Hong Liu ◽  
Xiaogang Gong ◽  
Jin-e Liang ◽  
Zhihong Wang ◽  
Huidong Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Rf Magnetron Sputtering ◽  
Pyroelectric Properties ◽  
Preferred Oriented

Preparation of La-Modified Lead Titanate Thin Films by Rf-Magnetron Sputtering Method and Their Pyroelectric Properties

1995 ◽  
Vol 34 (Part 2, No. 2B) ◽  
pp. L233-L235 ◽  
Author(s):  
Takeshi Kamada ◽  
Kazuki Komaki ◽  
Shigenori Hayashi ◽  
Masatoshi Kitagawa ◽  
Ryoichi Takayama ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Lead Titanate ◽  
Rf Magnetron Sputtering ◽  
Pyroelectric Properties

Reactive RF magnetron sputtering epitaxy of NiO thin films on (0001) sapphire and (100) MgO substrates

2021 ◽  
Author(s):  
Keisuke Nishimoto ◽  
Kohei Shima ◽  
Shigefusa F. Chichibu ◽  
Mutsumi Sugiyama
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Sapphire Substrate ◽  
Rf Magnetron Sputtering ◽  
Optical Devices ◽  
Single Domain ◽  
Grain Structures ◽  
Reactive Rf Magnetron Sputtering ◽  
Mgo Substrate

Abstract Epitaxial growths of NiO thin films were realized on (0001) sapphire and (100) MgO substrates by using a reactive RF magnetron sputtering method. The NiO epilayers grown on a (0001) sapphire exhibited the (111)-oriented double-domain structure, which comprised of a triangular and its inverted triangular grains. Meanwhile, the NiO epilayers on a (100) MgO exhibited the (100)-oriented single-domain structure, which comprised of quadrangular grains. The observed grain structures most likely reflect the growth planes of respective NiO epilayers, and, mixed crystals of NiO and MgO were present near the interface. Therefore, A (100) MgO substrate is suitable for obtaining a single-domain NiO epilayer, whereas a (0001) sapphire substrate is suitable for obtaining a NiO epilayer without interdiffusion between NiO and sapphire. These NiO epilayers will be expected for applying the physical properties evaluation using photoluminescence or Hall measurements, and the fabrication of electrical or optical devices.

Preparation and Pyroelectric Properties of La-Modified PbTiO8 Thin Films by Rf-Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
T. Kamada ◽  
R. Takayama ◽  
A. Tomozawa ◽  
S. Fujii ◽  
K. IIJIMA ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Linear Array ◽  
Rf Magnetron Sputtering ◽  
Fast Response ◽  
Pyroelectric Coefficient ◽  
Single Element ◽  
Air Conditioner ◽  
Pyroelectric Properties ◽  
Ir Sensors

AbstractHigh-quality La-modified PbTiO3 (Pb1−xLaxTi1−x/4O3; PLT) thin films were prepared by an rf-magnetron sputtering method. In this method, intermittent deposition was realized by periodical repetition of deposition and nondeposition processes. This deposition was found to enhance the horizontal grain growth of the films. The PLT thin films exhibit the phenomena named “self-polarization” and have high pyroelectric properties (pyroelectric coefficient γ of 5.0×10−8C/cm2K and low dielectric constant εr of 185) without a poling treatment. It was interestingly found that this self-polarization of the PLT thin films depends on the substrate temperature (Ts) and is based on a fairly small difference of the film composition (Pb/Ti). The pyroelectric properties were improved by means of addition of Mg to the PLT thin films. These thin films are expected to offer suitable materials for pyroelectric infrared (IR) sensors. High sensitive pyroelectric IR sensors (single element type and linear array type) were fabricated by using the PLT (x=0. 1) thin films with the new structures and the device processes. The sensors have remarkably high specific detectivity D* of 3.5×108 cm. Hz1/2/W and very fast response. A new compact IR sensing system using the linear array sensor (8 elements) has been developed for a new type of room air-conditioner.

Determination of domain structure and abundance of epitaxial Pb(Zr, Ti)O3 thin films grown on MgO(001) by rf magnetron sputtering

1999 ◽  
Vol 14 (1) ◽  
pp. 132-141 ◽  
Author(s):  
Kyeong Seok Lee ◽  
Young Min Kang ◽  
Sunggi Baik
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Rf Magnetron Sputtering ◽  
Curve Analysis ◽  
Crystalline Quality ◽  
Rocking Curve ◽  
X Ray

Epitaxial Pb(ZrxTi1−x)O3 (x = 0.0−0.32) ferroelectric thin films of 500 nm thickness were grown on MgO(001) single crystal substrates by in situ rf magnetron sputtering, and evolution of their domain structures is characterized by employing various x-ray diffraction techniques. X-ray θ-2θ scan showed the films were grown highly c-axis oriented with a tetragonal perovskite structure. 90° domain configuration was investigated using the x-ray rocking curve analysis for PZT 100 peaks in two different Φphi; angles. The rocking curve analysis showed that the degree of c-axis orientation and the crystalline quality of the films were improved continuously with increasing Zr concentration. The c-domain abundance as a function of Zr concentration was quantified using the x-ray rocking curves of PZT 001 and 100, taking account of structural factors and Lorentz-polarization factors. High temperature x-ray technique was also employed to quantify the domain structure as a function of temperature during cooling after reheating the samples to 650 °C. During the cooling process, c-domain abundance was found to increase continuously while the crystalline quality of the films was deteriorated below the Curie temperature. The results led us to conclude that the transformation strain of the film at and below the Curie temperature plays a significant role in the final domain structure and abundance of epitaxial PZT thin films.

The Properties of Ferroelectric Domain of PLT Thin Films Prepared by RF Magnetron Sputtering

2005 ◽  
Vol 902 ◽  
Author(s):  
Hong Liu ◽  
Zhaohui Pu ◽  
Zhihong Wang ◽  
Huidong Huang ◽  
Yanrong Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Rf Sputtering ◽  
Piezoresponse Force Microscopy ◽  
Rf Magnetron Sputtering ◽  
Pyroelectric Coefficient ◽  
Pure Perovskite Structure ◽  
Force Microscopy ◽  
Xrd Patterns

AbstractLanthanum-modified lead titanate (PLT) ferroelectric thin films were fabricated by the RF magnetron sputtering system on Pt/Ti/SiO2/Si(100) substrates. The x-ray diffraction (XRD) patterns of the PLT films showed that the pure perovskite structure was formed in the PLT thin films. The Piezoresponse Force Microscopy (PFM) was used for determining the domain structure of these films. It was found that the 90 degree domain was the main domain structure of PLT thin films. It was found that the PLT films prepared by RF sputtering have relatively large pyroelectric coefficient γ=2.20×10-8C·(cm2·K)-1 and relatively high figures of merit for current responsivity, voltage responsivity and specific detectivity.

scholarly journals Pyroelectric Properties of c-Axis Oriented [(1-x)PbTiO3+xMgO] Thin Films Prepared by rf-Magnetron Sputtering Method

1991 ◽  
Vol 99 (1145) ◽  
pp. 30-35
Author(s):  
Masafumi KOBUNE ◽  
Kiyoshi AMAKAWA ◽  
Hiroshi NAKAYAMA ◽  
Mitsuyoshi ONODA
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pyroelectric Properties

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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