Fabrication and Characterization of ZnO Films for Biological Sensor Application of FPW Device

Author(s):  
Sang H. Yoon ◽  
Dong-Joo Kim
2009 ◽  
Vol 48 (3) ◽  
pp. 035504 ◽  
Author(s):  
Yong-June Choi ◽  
Hyeong-Ho Park ◽  
Hyuncheol Kim ◽  
Hyung-Ho Park ◽  
Ho Jung Chang ◽  
...  

2011 ◽  
Vol 254 ◽  
pp. 144-147 ◽  
Author(s):  
Somsing Rathod ◽  
Atul Vir Singh ◽  
Sudhir Chandra ◽  
Shiban K. Koul

In the present work we report design, simulation, fabrication and characterization of thin film bulk acoustic resonator (FBAR). The FBAR has been modeled as a single port device with two terminals. The FBAR has been fabricated using Si-SiO2-Al–ZnO-Al structure. Zinc Oxide (ZnO) films were deposited by RF magnetron sputtering using Ceramic ZnO target in Ar-O2(1:1) ambient without external substrate heating. The XRD result confirms the preferred C-axis orientation of the films required for good piezoelectric properties. These ZnO films have been used to fabricate air gap type resonator. A four mask process sequence was used for this purpose. Lift-off process was used to pattern Al top electrode. In order to create the air cavity under the active device area, the bulk Si was etched in 40 % KOH at 80 °C. A specially designed mechanical jig was used to protect the front side of the device during anisotropic etching. Vector network analyzer was used to measure the reflection coefficient (S11: Return Loss) of the device. The resonant frequency of the resonator was measured to be 2.89 GHz as compare to the simulated frequency of 2.85 GHz with a return loss of 14.51 dB.


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