Addressing the sample preparation challenges in failure analysis of wafer level chip scale package mounted inside a customer camera module

Author(s):  
Jason H. Lagar ◽  
Rudolf A. Sia
Author(s):  
Jason H. Lagar ◽  
Rudolf A. Sia

Abstract Most Wafer Level Chip Scale Package (WLCSP) units returned by customers for failure analysis are mounted on PCB modules with an epoxy underfill coating. The biggest challenge in failure analysis is the sample preparation to remove the WLCSP device from the PCB without inducing any mechanical defect. This includes the removal of the underfill material to enable further electrical verification and fault isolation analysis. This paper discusses the evaluations conducted in establishing the WLCSP demounting process and removal of the epoxy underfill coating. Combinations of different sample preparation techniques and physical failure analysis steps were evaluated. The established process enabled the electrical verification, fault isolation and further destructive analysis of WLCSP customer returns mounted on PCB and with an epoxy underfill coating material. This paper will also showcase some actual full failure analysis of WLCSP customer returns where the established process played a vital role in finding the failure mechanism.


Author(s):  
Kah Chin Cheong

Abstract The application of underfill materials for board level assembly has been increasing rapidly in semiconductor industry to enhance strength and reliability performance of semiconductor components in harsh environments. However, due to the intractability of the capillary underfill after curing, extracting a chip scale package (CSP) device from a printed circuit board (PCB) with a combination of mold compound and capillary underfill for ATE testing has become difficult and challenging. This poses a severe limitation to this technology regarding electrical testing and failure analysis. In order to address the challenge in extracting a CSP device from an underfilled PCB without inducing any mechanical damage, a series of sample preparation techniques has been introduced. This paper discusses the techniques in removing the fine pitch CSP device from underfilled PCB module in a relatively simple way which includes application of chemical solutions, de-soldering, residual solder remnants cleaning and reballing. The established process enables ATE testing, electrical testing and failure analysis to be performed on any CSP devices. An electrical evaluation on the efficiency of a CSP device after a series of sample preparation processes will also be highlighted.


Author(s):  
Shih-Ting Liu ◽  
Tao-Chi Liu ◽  
Ming-Lun Chang ◽  
Jandel Lin

Abstract Contrary to traditional packages, packaging and testing of wafer-level chip scale package (WLCSP) are done before wafer dicing. The package can’t be rebuilt on a single chip; therefore, the failure analysis and debug performed by Circuit Edit (CE) on ICs with WLCSP face challenges. In addition, there are route designs on the package level of WLCSP devices, which are unique compared with traditional packages. CE is required on both chip and package level of WLCSP devices. This package technology offers the smallest possible package size; consequently, it has seen wider use lately. Developing the approaches of FIB edits on a fully-packaged WLCSP device is indeed essential. Thus, methodologies for CE and debug on WLCSP devices will be explored in this study.


Author(s):  
Dandan Wang ◽  
Hua Feng ◽  
Pik Kee Tan ◽  
Guorong Low ◽  
Khiam Oh Chong ◽  
...  

Abstract Focused Ion Beam is widely used in semiconductor industry for critical applications such as TEM sample preparation and circuit edit. In this paper, we introduce an automated failure analysis technique for high precision polishing at the wafer level. Using FIB, it is possible to precisely mill at a region of interest, capture images at the region of interest simultaneously and cut into the die directly to expose the exact failure without damaging other sections of the specimen.


Author(s):  
Ng Sea Chooi ◽  
Chor Theam Hock ◽  
Ma Choo Thye ◽  
Khoo Poh Tshin ◽  
Dan Bockelman

Abstract Trends in the packaging of semiconductors are towards miniaturization and high functionality. The package-on-package(PoP) with increasing demands is beneficial in cost and space saving. The main failure mechanisms associated with PoP technology, including open joints and warpage, have created a lot of challenges for Assembly and Failure Analysis (FA). This paper outlines the sample preparation process steps to overcome the challenges to enable successful failure analysis and optical probing.


Author(s):  
Andrew J. Komrowski ◽  
N. S. Somcio ◽  
Daniel J. D. Sullivan ◽  
Charles R. Silvis ◽  
Luis Curiel ◽  
...  

Abstract The use of flip chip technology inside component packaging, so called flip chip in package (FCIP), is an increasingly common package type in the semiconductor industry because of high pin-counts, performance and reliability. Sample preparation methods and flows which enable physical failure analysis (PFA) of FCIP are thus in demand to characterize defects in die with these package types. As interconnect metallization schemes become more dense and complex, access to the backside silicon of a functional device also becomes important for fault isolation test purposes. To address these requirements, a detailed PFA flow is described which chronicles the sample preparation methods necessary to isolate a physical defect in the die of an organic-substrate FCIP.


Author(s):  
Pradip Sairam Pichumani ◽  
Fauzia Khatkhatay

Abstract Silicon photonics is a disruptive technology that aims for monolithic integration of photonic devices onto the complementary metal-oxide-semiconductor (CMOS) technology platform to enable low-cost high-volume manufacturing. Since the technology is still in the research and development phase, failure analysis plays an important role in determining the root cause of failures seen in test vehicle silicon photonics modules. The fragile nature of the test vehicle modules warrants the development of new sample preparation methods to facilitate subsequent non-destructive and destructive analysis methods. This work provides an example of a single step sample preparation technique that will reduce the turnaround time while simultaneously increasing the scope of analysis techniques.


Author(s):  
Gwee Hoon Yen ◽  
Ng Kiong Kay

Abstract Today, failure analysis involving flip chip [1] with copper pillar bump packaging technologies would be the major challenges faced by analysts. Most often, handling on the chips after destructive chemical decapsulation is extremely critical as there are several failure analysis steps to be continued such as chip level fault localization, chip micro probing for fault isolation, parallel lapping [2, 3, 4] and passive voltage contrast. Therefore, quality of sample preparation is critical. This paper discussed and demonstrated a quick, reliable and cost effective methodology to decapsulate the thin small leadless (TSLP) flip chip package with copper pillar (CuP) bump interconnect technology.


Author(s):  
Julien Goxe ◽  
Béatrice Vanhuffel ◽  
Marie Castignolles ◽  
Thomas Zirilli

Abstract Passive Voltage Contrast (PVC) in a Scanning Electron Microscope (SEM) or a Focused Ion Beam (FIB) is a key Failure Analysis (FA) technique to highlight a leaky gate. The introduction of Silicon On Insulator (SOI) substrate in our recent automotive analog mixed-signal technology highlighted a new challenge: the Bottom Oxide (BOX) layer, by isolating the Silicon Active Area from the bulk made PVC technique less effective in finding leaky MOSFET gates. A solution involving sample preparation performed with standard FA toolset is proposed to enhance PVC on SOI substrate.


Author(s):  
Roger Alvis ◽  
Jeff Blackwood ◽  
Sang-Hoon Lee ◽  
Matthew Bray

Abstract Semiconductor devices with critical dimensions less than 20nm are now being manufactured in volume. A challenge facing the failure analysis and process-monitoring community is two-fold. The first challenge of TEM sample prep of such small devices is that the basic need to end-point on a feature-of-interest pushes the imaging limit of the instrument being used to prepare the lamella. The second challenge posed by advanced devices is to prepare an artifact-free lamella from non-planar devices such as finFETs as well as from structures incorporating ‘non-traditional’ materials. These challenges are presently overcome in many advanced logic and memory devices in the focused ion beam-based TEM sample preparation processes by inverting the specimen prior to thinning to electron transparency. This paper reports a highthroughput method for the routine preparation of artifact-free TEM lamella of 20nm thickness, or less.


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