Degradation characteristics and analysis of AlGaN/GaN high electron mobility transistors under reverse gate bias step stress

2013 ◽  
Author(s):  
Chang Zeng ◽  
Yuansheng Wang ◽  
Xiao Hong ◽  
Ping Lai ◽  
Yun Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Bias ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

FABRICATION OF SELF-ALIGNED T-GATE AlGaN/GaN HIGH ELECTRON MOBILITY TRANSISTORS

2004 ◽  
Vol 14 (03) ◽  
pp. 805-809
Author(s):  
JAESUN LEE ◽  
DONGMIN LIU ◽  
HYEONGNAM KIM ◽  
MICHAEL L. SCHUETTE ◽  
WU LU ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
The Self ◽  
High Electron ◽  
Small Signal ◽  
Gate Bias ◽  
Gate Leakage Current ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Self-aligned AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated and the direct current and radio frequency small signal performance of self-aligned devices is characterized in comparison with non-self-aligned devices. An ultra-thin Ti/Al/Ti/Au ohmic metal scheme is used for gate to source and drain self-alignment. To suppress the gate leakage current, the ohmic contact annealing of self-aligned devices is performed in a furnace. The self-aligned devices with 0.25 μm gate-length and 100 μm gate-width exhibit good pinch-off characteristics. The maximum drain current at a gate bias of 1 V is 620 mA/mm for self-aligned HEMTs, and 400 mA/mm for non-self-aligned devices, respectively. A maximum extrinsic transconductance of 146 mS/mm is measured in self-aligned devices, while non-self-aligned HEMTs show only a peak g m of 92 mS/mm. The self-aligned devices exhibit an extrinsic f T of 39 GHz and an f MAX of 130 GHz, whereas non-self-aligned HEMTs show an f T of 15 GHz and an f MAX of 35 GHz.

scholarly journals Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Seung-Hye Baek ◽  
Gun-Woo Lee ◽  
Chu-Young Cho ◽  
Sung-Nam Lee
Keyword(s):  
Electron Mobility ◽  
Dark Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Bias ◽  
High Electron Mobility ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Algan Barrier ◽  
Dimensional Electron Gas

AbstractGate-controlled amplifiable ultraviolet phototransistors have been demonstrated using AlGaN/GaN high-electron-mobility transistors (HEMTs) with very thin AlGaN barriers. In the AlGaN/GaN HEMTs, the dark current between the source and drain increases with increasing thickness of the AlGaN barrier from 10 to 30 nm owing to the increase in piezoelectric polarization-induced two-dimensional electron gas (2-DEG). However, the photocurrent of the AlGaN/GaN HEMT decreases with increasing thickness of the AlGaN barrier under ultraviolet exposure conditions. It can be observed that a thicker AlGaN barrier exhibits a much higher 2-DEG than the photogenerated carriers at the interface between AlGaN and GaN. In addition, regardless of the AlGaN barrier thickness, the source–drain dark current increases as the gate bias increases from − 1.0 to + 1.0 V. However, the photocurrent of the phototransistor with the 30 nm thick AlGaN barrier was not affected by the gate bias, whereas that of the phototransistor with 10 nm thick AlGaN barrier was amplified from reduction of the gate bias. From these results, we suggest that by controlling the gate bias, a thin AlGaN barrier can amplify/attenuate the photocurrent of the AlGaN/GaN HEMT-based phototransistor.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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