Evaluation of thermal mapping analysis technique for failure mechanism

Author(s):  
Yusnani Mohamad Yusof ◽  
Izhar Helmi Ahmad ◽  
Nur Ainn Hanis Abd Halim
Author(s):  
Sarven Ipek ◽  
David Grosjean

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.


1986 ◽  
Vol 30 ◽  
pp. 39-44 ◽  
Author(s):  
Dale R. Boehme

AbstractElemental analyses of geologic materials were obtained using X-ray microfluorescence combined with simultaneous elemental digital mapping. The analytical results corroborate the information obtained by electron and optical microscopy methods. Zoned garnet and ore deposit specimens were analyzed and compared to information obtained from other analytical methods. The penetrating nature of the X-ray beam using this method provides elemental information from beneath the sample surface. The combination of this depth information with the surface information supplied by electron microscopy provides a more complete analysis of the sample than is possible with each technique alone. Minimal or no sample preparation along with the ability to examine materials in air enhances the microfluorescence and digital mapping analysis technique.


Author(s):  
Yuk L. Tsang ◽  
Giri Nallapati ◽  
Ron Skarupa ◽  
Brian Anthony

Abstract A major failure mode known as ROMBIST (logic and memory) that topped the yield loss pareto and plagued a 0.13 m technology chipset production was analyzed. This MCUROM fail exhibited a unique failing pattern where every 4th row failed. A detailed electrical microprobing analysis had led to an exact model that was able to explain the failure mechanism. This model pinpointed a PFET extension implant blockage. Subsequent silicon etch analysis directed by the model prediction brought out the non visual defect (NVD). Inline inspection at the extension implant photo step identified the root cause. A greater than 45% reduction in die cost was realized in lots with photo resist fixes implemented.


2020 ◽  
Vol 1600 ◽  
pp. 012055
Author(s):  
Kaibo Cui ◽  
Yezun Sun ◽  
Mingzhe Zhang ◽  
Zhenggang Wen

Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


Author(s):  
W. M. Kriven

Significant progress towards a fundamental understanding of transformation toughening in composite zirconia ceramics was made possible by the application of a TEM contrast analysis technique for imaging elastic strains. Spherical zirconia particles dispersed in a large-grained alumina matrix were examined by 1 MeV HVEM to simulate bulk conditions. A thermal contraction mismatch arose on cooling from the processing temperature of 1500°C to RT. Tetragonal ZrO2 contracted amisotropically with α(ct) = 16 X 10-6/°C and α(at) = 11 X 10-6/°C and faster than Al2O3 which contracted relatively isotropically at α = 8 X 10-6/°C. A volume increase of +4.9% accompanied the transformation to monoclinic symmetry at room temperature. The elastic strain field surrounding a particle before transformation was 3-dimensionally correlated with the internal crystallographic orientation of the particle and with the strain field after transformation. The aim of this paper is to theoretically and experimentally describe this technique using the ZrO2 as an example and thereby to illustrate the experimental requirements Tor such an analysis in other systems.


2006 ◽  
Vol 175 (4S) ◽  
pp. 88-88
Author(s):  
Cheryn Song ◽  
Taejin Kang ◽  
Gil Hyun Shin ◽  
Donglk Shin ◽  
Jae Y. Ro ◽  
...  

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