Comparison of classical and two-photon photoelectric laser stimulation capabilities for failure analysis

2011 ◽  
Author(s):  
K. Shao ◽  
V. Pouget ◽  
E. Faraud ◽  
C. Larue ◽  
D. Lewis
Keyword(s):  
Failure Analysis ◽  
Laser Stimulation ◽  
Two Photon

Picosecond Single-Photon and Femtosecond Two-Photon Pulsed Laser Stimulation for IC Characterization and Failure Analysis

2009 ◽  
Author(s):  
V. Pouget ◽  
E. Faraud ◽  
K. Shao ◽  
S. Jonathas ◽  
D. Horain ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Single Photon ◽  
Pulsed Laser ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Ultrashort Laser Pulses ◽  
Laser Stimulation ◽  
Two Photon ◽  
Resolution Improvement ◽  
Ultrashort Laser

Abstract This paper presents the use of pulsed laser stimulation with picosecond and femtosecond laser pulses. We first discuss the resolution improvement that can be expected when using ultrashort laser pulses. Two case studies are then presented to illustrate the possibilities of the pulsed laser photoelectric stimulation in picosecond single-photon and femtosecond two-photon modes.

Dual Port RAM MBIST Failure Analysis Using Time Resolved Dynamic Laser Stimulation

2008 ◽  
Author(s):  
Jonathan Shaw ◽  
Christopher McMahon ◽  
Yin Shyang Ng ◽  
Félix Beaudoi
Keyword(s):  
Failure Analysis ◽  
Embedded Memory ◽  
Complementary Information ◽  
Time Resolved ◽  
Laser Stimulation ◽  
Specific Indication ◽  
Read Operation ◽  
Site Localization

Abstract This paper presents the use of Dynamic Laser Stimulation (DLS) and Time-Resolved DLS (TR-DLS) to provide fail site localization and complementary information on a failed embedded memory IC. In this study, an embedded dual port RAM within a 90nm IC that failed one of the Memory Built-In Self Tests (MBISTs) was investigated. This technique rapidly localized the failing area within the memory read/write circuitry. The TR-DLS provided maps for each operation of the MBIST pattern. With this information, the failure was clearly identified as a read operation failure. The TR-DLS technique also provided much refined site signature (down to just one net) within the sense amp of the Port B of the dual port RAM. This information provided very specific indication on how to improve the operation of that particular sense amp circuitry within the dual port RAM Memory.

Photoelectric Laser Stimulation applied to Latch-Up phenomenon and localization of parasitic transistors in an industrial failure analysis laboratory

2011 ◽  
Vol 51 (9-11) ◽  
pp. 1658-1661 ◽  
Author(s):  
R. Llido ◽  
J. Gomez ◽  
V. Goubier ◽  
N. Froidevaux ◽  
L. Dufayard ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Laser Stimulation ◽  
Analysis Laboratory ◽  
Latch Up

Yield and Failure Analysis of FinFET Source to Drain Leakage in 12nm Technology

2020 ◽  
Author(s):  
Felix Beaudoin ◽  
Satish Kodali ◽  
Rohan Deshpande ◽  
Wayne Zhao ◽  
Edmund Banghart ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Fault Localization ◽  
Detailed Characterization ◽  
Laser Stimulation ◽  
Emission Microscopy ◽  
Scan Chain ◽  
Multiple Samples ◽  
Tem Lamella ◽  
Diffusion Activation

Abstract Fault localization using both dynamic laser stimulation and emission microscopy was used to localize the failing transistors within the failing scan chain latch on multiple samples. Nanoprobing was then performed and the source to drain leakage in N-type FinFETs was identified. After extensive detailed characterization, it was concluded that the N-type dopant signal was likely due to projections from the source/drain regions included in the TEM lamella. Datamining identified the scan chain fail to be occurring uniquely for a specific family of tools used during source/drain implant diffusion activation. This paper discusses the processes involved in yield delta datamining of FinFET and its advantages over failure characterization, fault localization, nanoprobing, and physical failure analysis.

Failure Analysis enhancement by evaluating the Photoelectric Laser Stimulation impact on mixed-mode ICs

2008 ◽  
Vol 48 (8-9) ◽  
pp. 1529-1532 ◽  
Author(s):  
M. Sienkiewicz ◽  
P. Perdu ◽  
A. Firiti ◽  
K. Sanchez ◽  
O. Crepel ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Mixed Mode ◽  
Laser Stimulation

Photoelectric laser stimulation in a failure analysis laboratory

2004 ◽  
Author(s):  
A. Firiti ◽  
D. Lewis ◽  
F. Beaudoin ◽  
P. Perdu ◽  
G. Haller ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Laser Stimulation ◽  
Analysis Laboratory

Photon Emission Microscope as a Tool for 3-Dimensional Semiconductor Device Failure Analysis

2012 ◽  
Author(s):  
Steven J. Chun
Keyword(s):  
Failure Analysis ◽  
Semiconductor Device ◽  
Photon Emission ◽  
Three Dimensional ◽  
Analysis Method ◽  
Cross Sectional ◽  
3 Dimensional ◽  
Two Photon ◽  
Processing Times ◽  
Sectional Analysis

Abstract A three dimensional (3-D) photon emission failure analysis method has been developed to pinpoint failure sites or emission sites on the x, y, and z planes of a degraded diode. The 3-D analysis consists of a cross-sectioning step process on two adjacent sides of a diode utilizing two photon emission sites from respective sides of the die as a map. This process negates the uncertainty and long processing times during cross-sectional analysis to find minute defects in diodes.

Characterization and Simulation of a Body Biased Structure in Triple-Well Technology under Pulsed Photoelectric Laser Stimulation

2014 ◽  
Author(s):  
N. Borrel ◽  
C. Champeix ◽  
M. Lisart ◽  
A. Sarafianos ◽  
E. Kussener ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Integrated Circuit ◽  
Laser Power ◽  
Pulsed Laser ◽  
Electrical Model ◽  
Activation Threshold ◽  
Laser Stimulation ◽  
Laser Illumination ◽  
High Laser ◽  
Complex Circuits

Abstract This study is driven by the need to optimize failure analysis methodologies based on laser/silicon interactions inside an integrated circuit using a triple-well process. It is therefore mandatory to understand the behavior of elementary devices to laser illumination, in order to model and predict the behavior of more complex circuits. This paper presents measurements of the photoelectric currents induced by a pulsed laser on a triple-well Psubstrate/DeepNwell/Pwell structure dedicated to low power body biasing techniques. It reveals possible bipolar transistor activation at high laser power. This activation threshold revealed its dependence on laser power and wells biasing. Based on the measurements made during our experiments, an electrical model is proposed that makes it possible to simulate the effects induced by photoelectric laser stimulation.

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