New insights into the charge loss components in a SONOS flash memory cell before and after long term cycling

2004 ◽  
Author(s):  
Y.T. Lin ◽  
P.-Y. Chiang ◽  
C.S. Lai ◽  
S.S. Chung ◽  
G. Chou ◽  
...  
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Charge Loss ◽  
Before And After ◽  
Flash Memory Cell

Charge loss behavior of a metal-alumina-nitride-oxide-silicon-type flash memory cell with different levels of charge injection

2008 ◽  
Vol 93 (23) ◽  
pp. 232105 ◽  
Author(s):  
Man Chang ◽  
Minseok Jo ◽  
Seonghyun Kim ◽  
Yongkyu Ju ◽  
Seungjae Jung ◽  
...  
Keyword(s):  
Flash Memory ◽  
Charge Injection ◽  
Memory Cell ◽  
Charge Loss ◽  
Flash Memory Cell ◽  
Nitride Oxide ◽  
Different Levels

A new technique for hot carrier reliability evaluations of flash memory cell after long-term program/erase cycles

1999 ◽  
Vol 46 (9) ◽  
pp. 1883-1889 ◽  
Author(s):  
S.S. Chung ◽  
Cherng-Ming Yih ◽  
Shui-Ming Cheng ◽  
Mong-Song Liang
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
New Technique ◽  
Hot Carrier ◽  
Flash Memory Cell ◽  
A New Technique

Carrier Profiling of the 10-nm-order Structure in a 3D Flash Memory Cell Using Scanning Nonlinear Dielectric Microscopy

2019 ◽  
Author(s):  
Jun Hirota ◽  
Ken Hoshino ◽  
Tsukasa Nakai ◽  
Kohei Yamasue ◽  
Yasuo Cho
Keyword(s):  
Spatial Resolution ◽  
Flash Memory ◽  
Analytical Techniques ◽  
Memory Cell ◽  
Memory Device ◽  
Floating Gate ◽  
Order Structure ◽  
Carrier Distribution ◽  
Nonlinear Dielectric ◽  
Flash Memory Cell

Abstract In this paper, the authors report their successful attempt to acquire the scanning nonlinear dielectric microscopy (SNDM) signals around the floating gate and channel structures of the 3D Flash memory device, utilizing the custom-built SNDM tool with a super-sharp diamond tip. The report includes details of the SNDM measurement and process involved in sample preparation. With the super-sharp diamond tips with radius of less than 5 nm to achieve the supreme spatial resolution, the authors successfully obtained the SNDM signals of floating gate in high contrast to the background in the selected areas. They deduced the minimum spatial resolution and seized a clear evidence that the diffusion length differences of the n-type impurity among the channels are less than 21 nm. Thus, they concluded that SNDM is one of the most powerful analytical techniques to evaluate the carrier distribution in the superfine three dimensionally structured memory devices.

Flash Memory Cell Compact Modeling Using PSP Model

2008 ◽  
Author(s):  
Anthony Maure ◽  
Pierre Canet ◽  
Frederic Lalande ◽  
Bertrand Delsuc ◽  
Jean Devin
Keyword(s):  
Flash Memory ◽  
Memory Cell ◽  
Compact Modeling ◽  
Flash Memory Cell
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