Investigation of hot-carrier induced interface damages via small-signal characteristics of drain-to-substrate gated-diode

2002 ◽  
Author(s):  
M.M. Lau ◽  
C.T. Hsu ◽  
Y.T. Yeow
Keyword(s):  
Small Signal ◽  
Hot Carrier ◽  
Signal Characteristics

scholarly journals Efficient symbolic computation of approximated small-signal characteristics of analog integrated circuits

1995 ◽  
Vol 30 (3) ◽  
pp. 327-330 ◽  
Author(s):  
P. Wambacq ◽  
F.V. Fernandez ◽  
G. Gielen ◽  
W. Sansen ◽  
A. Rodriguez-Vazquez
Keyword(s):  
Integrated Circuits ◽  
Symbolic Computation ◽  
Analog Integrated Circuits ◽  
Small Signal ◽  
Signal Characteristics

The Effect of Channel Recess and Passivation on 4H-SiC MESFETs

2002 ◽  
Vol 742 ◽  
Author(s):  
Ho-Young Cha ◽  
Christopher I. Thomas ◽  
Goutam Koley ◽  
Lester F. Eastman ◽  
Michael G. Spencer
Keyword(s):  
Breakdown Voltage ◽  
Drain Current ◽  
Surface Effects ◽  
Gate Length ◽  
Small Signal ◽  
Saturation Current ◽  
Power Performance ◽  
Dc Characteristics ◽  
Signal Characteristics ◽  
Lower Saturation

ABSTRACTChannel-recessed 4H-SiC MESFETs were fabricated and demonstrated excellent small signal characteristics. A saturated current of 250 − 270 mA/mm at Vgs = 0 V and a maximum transconductance of 40 − 45 mS/mm were measured for channel-recessed devices with a gate length of 0.45 m. The three-terminal breakdown voltages (Vds) range from 120 V to 150 V. The Ft and Fmax of the 2 × 200 m devices were measured to be 14.5 GHz and 40 GHz, respectively. The channel recess technique results in a lower saturation current but higher breakdown voltage which makes it possible for the devices to operate at high voltages. Si3N4 passivation suppresses the instability in DC characteristics and improves CW power performance by reducing the surface effects. Less dispersion in the drain current during a power sweep was observed after passivation.

The measurement of the small-signal characteristics of transistors

1954 ◽  
Vol 1954 (9) ◽  
pp. 245-245
Author(s):  
E.H. Cooke-Yarborough ◽  
C.D. Florida ◽  
J.H. Stephen
Keyword(s):  
Small Signal ◽  
Signal Characteristics

The measurement of the small-signal characteristics of transistors

1954 ◽  
Vol 101 (73) ◽  
pp. 288-293
Author(s):  
E.H. Cooke-Yarborough ◽  
C.D. Florida ◽  
J.H. Stephen
Keyword(s):  
Small Signal ◽  
Signal Characteristics
Sign in / Sign up

Export Citation Format

Share Document