Modal gain investigation on the GaAs-based InAs/InGaAs quantum dot mode-locked laser

2017 ◽  
Author(s):  
X. Li ◽  
H. Wang ◽  
Z. L. Qiao ◽  
X. Guo ◽  
K. S. Ang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Modal Gain ◽  
Mode Locked Laser

Hybrid Integration of a Bowtie Slot Antenna and a Quantum Dot Mode-Locked Laser

2009 ◽  
Vol 8 ◽  
pp. 1337-1340 ◽  
Author(s):  
Junghoon Kim ◽  
C.G. Christodoulou ◽  
Z. Ku ◽  
Chang-Yi Lin ◽  
Yongchun Xin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Slot Antenna ◽  
Hybrid Integration ◽  
Mode Locked Laser

Enhanced modal gain of multilayer InAs∕InGaAs∕GaAs quantum dot lasers emitting at 1300nm

2006 ◽  
Vol 100 (12) ◽  
pp. 123111 ◽  
Author(s):  
A. Salhi ◽  
L. Fortunato ◽  
L. Martiradonna ◽  
R. Cingolani ◽  
M. De Vittorio ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Modal Gain ◽  
Gaas Quantum Dot

Tunneling Injection Quantum-Dot Lasers

2005 ◽  
Vol 891 ◽  
Author(s):  
Shun Lien Chuang ◽  
Jungho Kim ◽  
Peter K. Kondratko ◽  
Gabriel Walter ◽  
Nick Holonyak ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Injection Current ◽  
Stimulated Emission ◽  
Rate Equations ◽  
Quasi Equilibrium ◽  
Modal Gain ◽  
Gain Narrowing ◽  
Tunneling Injection ◽  
Gain Spectra ◽  
Evolution Behavior

ABSTRACTWe investigate a tunneling injection InP quantum-dot (QD) laser theoretically and experimentally. The device consists of a single compressively strained InP QD layer coupled closely to two tensile strained InGaP quantum wells (QWs). While most tensile strained QW lasers in this wavelength (red) range lase in the transverse-magnetic (TM) polarization, our QD laser lases in the transverse-electric (TE) polarization from the first excited state of the compressively strained QDs, which is coupled to the ground state of the tensile-strained InGaP QWs. When we measure TE and TM modal gain spectra, a typical QW gain evolution behavior is observed at low injection currents, which can be theoretically explained by the quasi-equilibrium of carrier distribution. When the injection current is increased near threshold, a TE gain narrowing and a simultaneous TM gain pinning are observed in the measured modal gain spectra, which cannot be explained via the quasi-equilibrium model. We propose a polarization-dependent photon-mediated carrier re-distribution in the QD-coupled-QW structure to explain this TE and TM gain evolution behavior. When the injection current is just below threshold, the strong carrier depletion via stimulated emission due to coupling between the InP QD and InGaP QW states plays an important role in carrier re-distribution, which depends on the optical transition energy and polarization. This polarization-dependent photon-mediated carrier re-distribution explains the TE gain narrowing and TM gain pinning behavior. To quantitatively demonstrate the photon-mediated carrier re-distribution near the threshold current, a set of coupled rate equations are solved taking into account the polarization-dependent stimulated emission processes. The calculated polarization power ratio based on the coupled rate equations explains the experimental observations.

Ultrashort Pulse and High Power Mode-Locked Laser With Chirped InAs/InP Quantum Dot Active Layers

2016 ◽  
Vol 28 (13) ◽  
pp. 1481-1484 ◽  
Author(s):  
Feng Gao ◽  
Shuai Luo ◽  
Hai-Ming Ji ◽  
Song-Tao Liu ◽  
Feng Xu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Power ◽  
Ultrashort Pulse ◽  
Active Layers ◽  
Power Mode ◽  
Mode Locked Laser

High net modal gain (>100 cm^−1) in 19-stacked InGaAs quantum dot laser diodes at 1000 nm wavelength band

2013 ◽  
Vol 38 (13) ◽  
pp. 2333 ◽  
Author(s):  
Fumihiko Tanoue ◽  
Hiroharu Sugawara ◽  
Kouichi Akahane ◽  
Naokatsu Yamamoto
Keyword(s):  
Quantum Dot ◽  
Laser Diodes ◽  
Wavelength Band ◽  
Modal Gain ◽  
Quantum Dot Laser
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