Experimental demonstration of a high efficiency compact bilayer inverse taper edge coupler for Si photonics

2016 ◽  
Author(s):  
Arnab Dewanjee ◽  
J. Stewart Aitchison ◽  
Mo. Mojahedi
Keyword(s):  
High Efficiency ◽  
Experimental Demonstration ◽  
Si Photonics

Experimental Demonstration of High Efficiency Electron Cyclotron Autoresonance Acceleration

1996 ◽  
Vol 76 (15) ◽  
pp. 2718-2721 ◽  
Author(s):  
M. A. LaPointe ◽  
R. B. Yoder ◽  
Changbiao Wang ◽  
A. K. Ganguly ◽  
J. L. Hirshfield
Keyword(s):  
High Efficiency ◽  
Electron Cyclotron ◽  
Experimental Demonstration

scholarly journals Integration of high-efficiency Mach-Zehnder modulator with DFB laser using membrane InP-based devices on Si photonics platform

2020 ◽  
Author(s):  
Tatsurou Hiraki ◽  
Takuma Aihara ◽  
Takuro Fujii ◽  
Koji Takeda ◽  
Yoshiho Maeda ◽  
...  
Keyword(s):  
High Efficiency ◽  
Si Photonics ◽  
Dfb Laser ◽  
Mach Zehnder Modulator

Experimental Demonstration of a High-Efficiency Relativistic Magnetron With Diffraction Output With Spherical Cathode Endcap

2017 ◽  
Vol 45 (2) ◽  
pp. 282-288 ◽  
Author(s):  
Christopher Leach ◽  
Sarita Prasad ◽  
Mikhail I. Fuks ◽  
Jerald Buchenauer ◽  
Jeremy W. McConaha ◽  
...  
Keyword(s):  
High Efficiency ◽  
Experimental Demonstration ◽  
Relativistic Magnetron

Experimental demonstration of a dispersive spectral splitting concentrator for high efficiency photovoltaics

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 949-955 ◽  
Author(s):  
Carlo Maragliano ◽  
Matteo Chiesa ◽  
Marco Stefancich
Keyword(s):  
Solar Cells ◽  
Mass Production ◽  
Large Scale ◽  
High Efficiency ◽  
Low Cost ◽  
Electrical Power ◽  
Optical Element ◽  
Optical Transmittance ◽  
Experimental Demonstration ◽  
Full Spectrum

ABSTRACTWe report the experimental demonstration of a low-cost paradigm for photovoltaic power generation that utilizes a prismatic Fresnel-like lens to simultaneously concentrate and separate sunlight into laterally spaced spectral bands. The optical element is designed using geometric optics and optical dispersion and its performance is simulated with a ray-tracing software. The device, fabricated by injection molding, suitable for large-scale mass production, is experimentally characterized. We report an average optical transmittance above 85% over the VIS-IR range and spectral separation in excellent agreement with our simulations. Finally, the system is tested with a pair of copper indium gallium selenide based solar cells. We demonstrate an increase in peak electrical power output of 160% under outdoor sunlight illumination, corresponding to an increase in power conversion efficiency of 15% relative to single-junction full-spectrum one-sun illumination. Given the ease of manufacturability and the potential of the proposed solution, we project that our design can provide a cost-effective alternative to multi-junction solar cells ready for mass production.

scholarly journals Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 7040
Author(s):  
Catalin Palade ◽  
Ana-Maria Lepadatu ◽  
Adrian Slav ◽  
Valentin Serban Teodorescu ◽  
Toma Stoica ◽  
...  
Keyword(s):  
Monoclinic Phase ◽  
High Efficiency ◽  
Quantum Confinement Effect ◽  
Short Wave ◽  
Fast Diffusion ◽  
X Ray Diffraction ◽  
Sputtering Deposition ◽  
Si Photonics ◽  
Transmission Electron ◽  
Short Wave Infrared

Group IV nanocrystals (NCs), in particular from the Si–Ge system, are of high interest for Si photonics applications. Ge-rich SiGe NCs embedded in nanocrystallized HfO2 were obtained by magnetron sputtering deposition followed by rapid thermal annealing at 600 °C for nanostructuring. The complex characterization of morphology and crystalline structure by X-ray diffraction, μ-Raman spectroscopy, and cross-section transmission electron microscopy evidenced the formation of Ge-rich SiGe NCs (3–7 nm diameter) in a matrix of nanocrystallized HfO2. For avoiding the fast diffusion of Ge, the layer containing SiGe NCs was cladded by very thin top and bottom pure HfO2 layers. Nanocrystallized HfO2 with tetragonal/orthorhombic structure was revealed beside the monoclinic phase in both buffer HfO2 and SiGe NCs–HfO2 layers. In the top part, the film is mainly crystallized in the monoclinic phase. High efficiency of the photocurrent was obtained in a broad spectral range of curves of 600–2000 nm at low temperatures. The high-quality SiGe NC/HfO2 matrix interface together with the strain induced in SiGe NCs by nanocrystallization of both HfO2 matrix and SiGe nanoparticles explain the unexpectedly extended photoelectric sensitivity in short-wave infrared up to about 2000 nm that is more than the sensitivity limit for Ge, in spite of the increase of bandgap by well-known quantum confinement effect in SiGe NCs.

Experimental Demonstration of High-Efficiency Cyclotron-Autoresonance-Maser Operation

1995 ◽  
Vol 75 (17) ◽  
pp. 3102-3105 ◽  
Author(s):  
V. L. Bratman ◽  
G. G. Denisov ◽  
B. D. Kol'chugin ◽  
S. V. Samsonov ◽  
A. B. Volkov
Keyword(s):  
High Efficiency ◽  
Experimental Demonstration ◽  
Cyclotron Autoresonance Maser
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