Nonlinear optical responses of photopolymerizable CdSe quantum dot-polymer nanocomposites capable of holographically patterning photonic lattice structures

2012 ◽  
Author(s):  
Y. Tomita ◽  
Y. Adachi ◽  
X. Liu ◽  
J. Oshima ◽  
T. Nakashima ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Polymer Nanocomposites ◽  
Nonlinear Optical ◽  
Lattice Structures ◽  
Optical Responses ◽  
Cdse Quantum Dot

Forecasting and analysis of nonlinear optical responses by tuning the thickness of a doped hollow cylindrical quantum dot

2020 ◽  
Vol 66 ◽  
pp. 444-452 ◽  
Author(s):  
M. Kria ◽  
M. El-Yadri ◽  
N. Aghoutane ◽  
L.M. Pérez ◽  
D. Laroze ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Nonlinear Optical ◽  
Optical Responses

MAGNETIC FIELD, PRESSURE AND TEMPERATURE DEPENDENT OPTICAL PROPERTIES IN A GaAs 9.0 P 1.0 QUANTUM DOT

2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Dot ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Photon Energy ◽  
Nonlinear Optical ◽  
Binding Energies ◽  
Nonlinear Optical Properties ◽  
Optical Rectification

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.

scholarly journals Linear and nonlinear optical responses in the chiral multifold semimetal RhSi

2020 ◽  
Vol 5 (1) ◽  
Author(s):  
Zhuoliang Ni ◽  
B. Xu ◽  
M.-Á. Sánchez-Martínez ◽  
Y. Zhang ◽  
K. Manna ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Chemical Potential ◽  
Technological Development ◽  
Optical Responses ◽  
Chiral Magnetic Effect ◽  
Hole Band ◽  
Linear And Nonlinear ◽  
Characteristic Features ◽  
Topological Semimetals ◽  
Terahertz Emission Spectroscopy

AbstractChiral topological semimetals are materials that break both inversion and mirror symmetries. They host interesting phenomena such as the quantized circular photogalvanic effect (CPGE) and the chiral magnetic effect. In this work, we report a comprehensive theoretical and experimental analysis of the linear and nonlinear optical responses of the chiral topological semimetal RhSi, which is known to host multifold fermions. We show that the characteristic features of the optical conductivity, which display two distinct quasi-linear regimes above and below 0.4 eV, can be linked to excitations of different kinds of multifold fermions. The characteristic features of the CPGE, which displays a sign change at 0.4 eV and a large non-quantized response peak of around 160 μA/V2 at 0.7 eV, are explained by assuming that the chemical potential crosses a flat hole band at the Brillouin zone center. Our theory predicts that, in order to observe a quantized CPGE in RhSi, it is necessary to increase the chemical potential as well as the quasiparticle lifetime. More broadly, our methodology, especially the development of the broadband terahertz emission spectroscopy, could be widely applied to study photogalvanic effects in noncentrosymmetric materials and in topological insulators in a contact-less way and accelerate the technological development of efficient infrared detectors based on topological semimetals.

scholarly journals Adjustment of Terahertz Properties Assigned to the First Lowest Transition of (D+, X) Excitonic Complex in a Single Spherical Quantum Dot Using Temperature and Pressure

2021 ◽  
Vol 11 (13) ◽  
pp. 5969
Author(s):  
Noreddine Aghoutane ◽  
Laura M. Pérez ◽  
Anton Tiutiunnyk ◽  
David Laroze ◽  
Sotirios Baskoutas ◽  
...  
Keyword(s):  
Refractive Index ◽  
Quantum Dot ◽  
Energy Region ◽  
Practical Importance ◽  
High Energy ◽  
Spherical Quantum Dot ◽  
Terahertz Region ◽  
Mass Approximation ◽  
Optical Responses ◽  
Temperature And Pressure

This theoretical study is devoted to the effects of pressure and temperature on the optoelectronic properties assigned to the first lowest transition of the (D+,X) excitonic complex (exciton-ionized donor) inside a single AlAs/GaAs/AlAs spherical quantum dot. Calculations are performed within the effective mass approximation theory using the variational method. Optical absorption and refractive index as function of the degree of confinement, pressure, and temperature are investigated. Numerical calculation shows that the pressure favors the electron-hole and electron-ionized donor attractions which leads to an enhancement of the binding energy, while an increasing of the temperature tends to reduce it. Our investigations show also that the resonant peaks of the absorption coefficient and the refractive index are located in the terahertz region and they undergo a shift to higher (lower) therahertz frequencies when the pressure (temperature) increases. The opposite effects caused by temperature and pressure have great practical importance because they offer an alternative approach for the adjustment and the control of the optical frequencies resulting from the transition between the fundamental and the first excited state of exciton bound to an ionized dopant. The comparison of the optical properties of exciton, impurity and (D+,X) facilitates the experimental identification of these transitions which are often close. Our investigation shows that the optical responses of (D+,X) are located between the exciton (high energy region) and donor impurity (low energy region) peaks. The whole of these conclusions may lead to the novel light detector or source of terahertz range.

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