Magnetic and transport properties of transition metal ion doped diluted magnetic semiconductors In2-xTMxO3 (TM = Cr, Mn, Fe, V)

2006 ◽  
Author(s):  
G. Peleckis ◽  
X. Wang ◽  
S. Dou ◽  
Q. Yao
Keyword(s):  
Transition Metal ◽  
Transport Properties ◽  
Metal Ion ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Transition Metal Ion ◽  
Diluted Magnetic

Diluted magnetic semiconductors: Actual structure and magnetic and transport properties

2008 ◽  
Vol 37 (2) ◽  
pp. 73-88 ◽  
Author(s):  
M. A. Chuev ◽  
B. A. Aronzon ◽  
E. M. Pashaev ◽  
M. V. Koval’chuk ◽  
I. A. Subbotin ◽  
...  
Keyword(s):  
Transport Properties ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Actual Structure ◽  
Diluted Magnetic

Effect of Growth Temperature on Structural and Magneto-Transport Properties of Co-Doped In2O3 Diluted Magnetic Semiconductors

2008 ◽  
Vol 1119 ◽  
Author(s):  
A Ghosh ◽  
R K Gupta ◽  
P K Kahol ◽  
K Ghosh
Keyword(s):  
Transport Properties ◽  
Growth Temperature ◽  
Diluted Magnetic Semiconductors ◽  
Magnetic Semiconductors ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Force Microscopy ◽  
Atomic Force ◽  
Diluted Magnetic ◽  
Co Doped

AbstractThin films of Co-doped In2O3 diluted magnetic semiconductor have been grown on c-plane sapphire single crystals using pulsed laser deposition technique. Different characterizations such as x-ray diffraction, atomic force microscopy, and magneto-transport have been carried out to study the effect of growth temperature on structural, electrical, and magneto-transport properties of these films. Crystalinity of the films increases with the growth temperature. The films grown at high temperature have preferred orientation along (222) direction, while films grown at low temperature behave more like to nanocrystaline. It is observed that electrical properties of the films strongly depend on growth temperature. The resistivity and magnetoresistance of the films decreases with increase in growth temperature. On the other hand, mobility of the films increases with increase in growth temperature. This could be due to improvement in crystalinity of the films.

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