Clocked Adiabatic XOR and XNOR CMOS Gates Design Based on Graphene Nanoribbon Complementary Field Effect Transistors

2015 ◽  
Author(s):  
Yaser M. Banadaki ◽  
Ashok Srivastava ◽  
Safura Sharifi
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon

New device structures for graphene nanoribbon field effect transistors

2016 ◽  
Vol 6 (3) ◽  
pp. 265-270 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Chong Wu Yi ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
New Device ◽  
Device Structures

Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors

Plasmonics ◽  
2015 ◽  
Vol 11 (2) ◽  
pp. 573-577 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Alieh Hivechi ◽  
Fatemeh Tavakoli ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Breakdown Voltage ◽  
Edge Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Generation Rate

An analytical drain current model for graphene nanoribbon tunnel field-effect transistors

2019 ◽  
Vol 58 (9) ◽  
pp. 095001
Author(s):  
Jiarui Bao ◽  
Shuyan Hu ◽  
Guangxi Hu ◽  
Laigui Hu ◽  
Ran Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current ◽  
Graphene Nanoribbon

Phonon limited transport in graphene nanoribbon field effect transistors using full three dimensional quantum mechanical simulation

2012 ◽  
Vol 112 (9) ◽  
pp. 094505 ◽  
Author(s):  
Nima Dehdashti Akhavan ◽  
Gregory Jolley ◽  
Gilberto A. Umana-Membreno ◽  
Jarek Antoszewski ◽  
Lorenzo Faraone
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Graphene Nanoribbon ◽  
Quantum Mechanical ◽  
Mechanical Simulation

scholarly journals Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

ACS Nano ◽  
2020 ◽  
Vol 14 (5) ◽  
pp. 5754-5762 ◽  
Author(s):  
Maria El Abbassi ◽  
Mickael L. Perrin ◽  
Gabriela Borin Barin ◽  
Sara Sangtarash ◽  
Jan Overbeck ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon

scholarly journals Erratum to: Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors

Plasmonics ◽  
2015 ◽  
Vol 11 (2) ◽  
pp. 579-579
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Alieh Hivechi ◽  
Fatemeh Tavakoli ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Breakdown Voltage ◽  
Edge Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Generation Rate
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