Grain growth of (111) nanotwined Cu on (100)-oriented Cu films

2016 ◽  
Author(s):  
Hsin-Yong Liu ◽  
Chih Chen
Keyword(s):  
Grain Growth ◽  
Cu Films

scholarly journals Hydrogen-Induced Grain Growth in Electrodeposited Cu Films

2015 ◽  
Vol 79 (3) ◽  
pp. 78-81 ◽  
Author(s):  
Hiroki Yoshida ◽  
Takaaki Yamazaki ◽  
Takayoshi Adachi ◽  
Naoki Fukumuro ◽  
Shinji Yae ◽  
...  
Keyword(s):  
Grain Growth ◽  
Cu Films

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

Texture Evolution in Cu Films and Lines

2007 ◽  
Vol 990 ◽  
Author(s):  
Chia-Jeng Chung ◽  
David Field ◽  
No-Jin Park ◽  
Christy Woo
Keyword(s):  
Grain Growth ◽  
Strain Energy ◽  
Texture Evolution ◽  
Growth Conditions ◽  
Geometric Constraints ◽  
In Situ Observation ◽  
Processing Conditions ◽  
Cu Films ◽  
Unique Character

ABSTRACTGrain growth in polycrystalline films is controlled by the energetics of the surface, interface and grain boundaries as well as strain energy. The unique character of damascene lines fabricated from electroplated Cu films introduces the additional considerations of bath chemistry and geometric constraints. The moderate stacking fault energy of Cu allows for the development of a substantial twin fraction for certain growth conditions. This paper discusses in-situ observation of grain growth in Cu films and lines under various processing conditions. It is shown that for thicker films and for structures constrained within damascene trenches the energetics of twin boundary formation play a large role in texture development of these structures.

Structure Evolution in Plated Cu Films

2005 ◽  
Vol 863 ◽  
Author(s):  
D.P. Field ◽  
NJ Park ◽  
PR Besser ◽  
JE Sanchez
Keyword(s):  
Film Thickness ◽  
Grain Growth ◽  
Texture Evolution ◽  
Structural Evolution ◽  
Similar Process ◽  
Structure Evolution ◽  
Line Geometry ◽  
Strong Function ◽  
Cu Films ◽  
Line Widths

AbstractStructure evolution in plated Cu films is a function of sublayer stacking, film thickness, plating chemistry, plating parameters, and temperature. The present work examines grain growth and texture evolution in annealed plated Cu on a 25 nm thick Ta sublayer for films of 480 and 750 nm in thickness. These results are compared against those obtained from damascene Cu lines fabricated from a similar process, using a series of line widths. The results show that the initial structures of the plated films are similar, with slightly weaker (111) texture, a higher fraction of twin boundaries, and larger grains in the thicker films. The microstructure of the Cu within the trench constraints is a strong function of line geometry with the propensity for twin boundary development controlling structural evolution.

Influence of a Capping Layer on the Mechanical Properties of Copper Films

1994 ◽  
Vol 356 ◽  
Author(s):  
R.-M. Keller ◽  
S. Bader ◽  
R. P. Vinci ◽  
E. Arzt
Keyword(s):  
Mechanical Properties ◽  
Film Thickness ◽  
Grain Growth ◽  
Low Temperatures ◽  
Bauschinger Effect ◽  
Diffusional Creep ◽  
Copper Films ◽  
Cu Films ◽  
Heating And Cooling ◽  
Cooling Stress

AbstractThe substrate curvature technique was employed to study the mechanical properties of 0.6 μm and 1.0 μm Cu films capped with a 50 nm thick Si3N4 layer and to compare them with the mechanical properties of uncapped Cu films. The microstructures of these films were also investigated. Grain growth, diffusional creep and dislocation processes are impeded by the cap layer. This is evident in the form of high stresses at high temperatures on heating and at low temperatures on cooling. At intermediate temperatures on heating and cooling, stress plateaus a relatively low stresses exist. This can be explained by the so-called Bauschinger effect. A film thickness dependence of the stresses in the film could not be observed for capped Cu films.

Electroplated Cu Recrystallization in Damascene Structures at Elevated Temperatures

1999 ◽  
Vol 564 ◽  
Author(s):  
Qing-Tang Jiang ◽  
Michael E. Thomas ◽  
Gennadi Bersuker ◽  
Brendan Foran ◽  
Robert Mikkola ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Film Thickness ◽  
Grain Growth ◽  
Elevated Temperatures ◽  
Retardation Effect ◽  
Cu Films ◽  
Grain Sizes ◽  
Geometrical Constraints ◽  
The Difference

AbstractTransformations in electroplated Cu films from a fine to course grain crystal structure (average grain sizes went from ∼0.1 µm to several microns) were observed to strongly depend on film thickness and geometry. Thinner films underwent much slower transformations than thicker ones. A model is proposed which explains the difference in transformation rates in terms of the physical constraint experienced by the film since grain growth in thinner films is limited by film thickness. Geometrical constraints imposed by trench and via structures appear to have an even greater retardation effect on the grain growth. Experimental observations indicate that it takes much longer for Cu in damascene structures to go through grain size transformations than blanket films.

scholarly journals Erratum: Hydrogen-Induced Grain Growth in Electrodeposited Cu Films

2016 ◽  
Vol 80 (10) ◽  
pp. 667-667
Author(s):  
Hiroki Yoshida ◽  
Takaaki Yamazaki ◽  
Takayoshi Adachi ◽  
Naoki Fukumuro ◽  
Shinji Yae ◽  
...  
Keyword(s):  
Grain Growth ◽  
Cu Films

scholarly journals Giant secondary grain growth in Cu films on sapphire

AIP Advances ◽  
2013 ◽  
Vol 3 (8) ◽  
pp. 082105 ◽  
Author(s):  
David L. Miller ◽  
Mark W. Keller ◽  
Justin M. Shaw ◽  
Katherine P. Rice ◽  
Robert R. Keller ◽  
...  
Keyword(s):  
Grain Growth ◽  
Cu Films

scholarly journals Correlation between the Microstructures of Bonding Interfaces and the Shear Strength of Cu-to-Cu Joints Using (111)-Oriented and Nanotwinned Cu

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2368 ◽  
Author(s):  
Jing-Ye Juang ◽  
Chia-Ling Lu ◽  
Yu-Jin Li ◽  
K. N. Tu ◽  
Chih Chen
Keyword(s):  
Shear Strength ◽  
Grain Growth ◽  
Fracture Mode ◽  
Growth Behavior ◽  
Ambient Conditions ◽  
Shear Tests ◽  
Strength Performance ◽  
Cu Films ◽  
Cu Pillar ◽  
Grain Growth Behavior

Highly (111)-oriented Cu pillar-bumps were bonded to highly (111)-oriented Cu films at temperatures ranging from 200 °C/100 °C to 350 °C/100 °C in N2 ambient conditions. The microstructures of the bonded interfaces affected the shear strength performance of the bonded Cu joints. The bonded interfaces at 300 °C/100 °C and 350 °C/100 °C had far fewer voids than interfaces bonded at 200 °C/100 °C and 250 °C/100 °C. In addition, grain growth took place across the bonding interfaces at temperatures above 300 °C/100 °C. The corresponding orientation map (OIM) showed the preferred orientation of large grown grains to be <100>. Shear tests revealed that the fracture mode was brittle for joints bonded at 200 °C/100 °C, but became ductile after bonded above 300 °C/100 °C. Based on the results, we found that voids and grain growth behavior play import roles in the shear strength performance of bonded Cu joints.

Observation of Grain Growth in Cu Films by In-Situ EBSD Analysis

2003 ◽  
Vol 766 ◽  
Author(s):  
D.P. Field ◽  
M.M. Nowell ◽  
O.V. Kononenko
Keyword(s):  
Grain Size ◽  
Grain Growth ◽  
Crystallographic Texture ◽  
Texture Evolution ◽  
Tantalum Nitride ◽  
Cu Films ◽  
Orientation Imaging ◽  
Film Characteristics ◽  
Beam Deposition

AbstractRecrystallization, grain growth and crystallographic texture evolution in Cu films is an area of importance for IC interconnect fabrication as the film characteristics influence the resulting line microstructure. This study examines Cu films deposited by partially ionized beam deposition onto a sublayer of tantalum nitride and additionally onto alpha- C:H. The films were annealed in-situ in the SEM chamber and intermittent orientation imaging was used to characterize the grain growth and crystallographic texture evolution in the films. Both initial and final textures are weak in each of the films analyzed, but are a function of sublayer material and thickness. Grain size in the Cu films is significantly smaller for the tantalum nitride sublayer than for the á-C:H sublayer.

Sign in / Sign up

Export Citation Format

Share Document