Surface modified SiO/sub 2/ xerogel films from HMDS/acetone for intermetal dielectrics

Author(s):  
Hong-Ryul Kim ◽  
Hyung-Ho Park
Author(s):  
S. V. Nitta ◽  
V. Pisupatti ◽  
A. Jain ◽  
P. C. Wayner ◽  
W. N. Gill ◽  
...  

1999 ◽  
Vol 565 ◽  
Author(s):  
Anurag Jain ◽  
Svetlana Rogojevic ◽  
Satya V. Nitta ◽  
Venumadhav Pisupatti ◽  
William N. Gill ◽  
...  

AbstractSurface modified silica xerogel films of high porosity (60 - 90 %) and uniform thickness (0.4–2 μm) were fabricated at ambient pressure on silicon and silicon dioxide. The rheological properties that govern film uniformity were determined. A relation between the final dried film thickness and spin speed was developed. The porosity and thickness of the films could be controlled independently. The same porosity could be obtained over a wide range of aging time and temperature combinations. Fracture toughness was measured using the edge-lift-off technique. The best values were comparable to concrete. Surface modification was affected by treating the film with trimethylcholorosilane (TMCS) and other modifiers. Moisture adsorption was studied at 100% RH using a quartz crystal microbalance technique. Depending upon the degree and kind of surface treatment, films absorbed as much as 32% or as little as 2% of their weight in water. Dielectric constants (K), losses and breakdown strengths were comparable to values for calcined, bulk aerogels. Thin (≤ 500 Å) films of Copper (Cu) and Tantalum (Ta) were deposited on xerogel films and subjected to thermal annealing. No diffusion was observed within the limits of RBS. High-density plasma etching showed that the films etch an order of magnitude faster than conventional SiO2 films.


2000 ◽  
Vol 612 ◽  
Author(s):  
Anurag Jain ◽  
Svetlana Rogojevic ◽  
Feng Wang ◽  
William N. Gill ◽  
Peter C. Wayner ◽  
...  

AbstractSurface modified silica xerogel films of high porosity (25-90 %) and uniform thickness (0.4-2 µm) were fabricated at ambient pressure on silicon and other substrates. Mechanical reliability of the films was determined by measuring fracture toughness (adhesive) as a function of aging time and temperature using the modified edge-lift-off technique. There is an optimum aging time at 60 °C aging to obtain maximum fracture toughness for the procedure used here.Cu/xerogel/Si and Ta/xerogel/Si structures were annealed at different temperatures and in different ambient environments were analyzed using RBS and optical microscopy to assess the extent of interaction with the xerogel film. When annealed in N2 with trace amounts of O2 (equivalent to 10-7-10-6 Torr vacuum), RBS analysis does not show diffusion of Cu or Ta through the xerogel up to 450 °C. At higher temperatures, or in the presence of larger concentrations of O2, Cu and Ta oxidize. Cu oxidation leads to significant diffusion through the xerogel. Ta oxidation also results in diffusion-like RBS spectra. Using the micron-size ion beam to probe the Ta surface, this was found to be solely due to buckling of Ta films on xerogel. A thin SiNx layer on top of Cu and Ta prevents metal oxidation up to 640 °C, Cu diffusion, and Ta buckling.


Author(s):  
P. S. Sklad

Over the past several years, it has become increasingly evident that materials for proposed advanced energy systems will be required to operate at high temperatures and in aggressive environments. These constraints make structural ceramics attractive materials for these systems. However it is well known that the condition of the specimen surface of ceramic materials is often critical in controlling properties such as fracture toughness, oxidation resistance, and wear resistance. Ion implantation techniques offer the potential of overcoming some of the surface related limitations.While the effects of implantation on surface sensitive properties may be measured indpendently, it is important to understand the microstructural evolution leading to these changes. Analytical electron microscopy provides a useful tool for characterizing the microstructures produced in terms of solute concentration profiles, second phase formation, lattice damage, crystallinity of the implanted layer, and annealing behavior. Such analyses allow correlations to be made with theoretical models, property measurements, and results of complimentary techniques.


2020 ◽  
pp. 114-119

Experimental and theoretical study Porphyrin-grafted ZnO nanowire arrays were investigated for organic/inorganic hybrid solar cell applications. Two types of porphyrin – Tetra (4-carboxyphenyle) TCPP and meso-Tetraphenylporphine (Zinc-TPP)were used to modify the nanowire surfaces. The vertically aligned nanowires with porphyrin modifications were embedded in graphene-enriched poly (3-hexylthiophene) [G-P3HT] for p-n junction nanowire solar cells. Surface grafting of ZnO nanowires was found to improve the solar cell efficiency. There are different effect for the two types of porphyrin as results of Zn existing. Annealing effects on the solar cell performance were investigated by heating the devices up to 225 °C in air. It was found that the cell performance was significantly degraded after annealing. The degradation was attributed to the polymer structural change at high temperature as evidenced by electrochemical impedance spectroscopy measurements.


2002 ◽  
Vol 716 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
A. Mallikarjunan ◽  
A. Kumar ◽  
J. Fortin ◽  
...  

AbstractThin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.


2017 ◽  
Author(s):  
Hunge Sudhir ◽  
Rahangdale Pralhad ◽  
Lanjewar Mamata

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