Knowledge Discovery of Acupuncture and Moxibustion Prescriptions for Diabetes Mellitus Therapy Based on Partial Ordered Structure Theory

2015 ◽  
Author(s):  
Hongling Yan ◽  
Wenxue Hong ◽  
Shaoxiong Li ◽  
Jialin Song ◽  
Quansheng Xu
Keyword(s):  
Diabetes Mellitus ◽  
Knowledge Discovery ◽  
Structure Theory ◽  
Ordered Structure ◽  
Acupuncture And Moxibustion

Symptom-herb knowledge discovery based on attribute partial ordered structure diagrams

2019 ◽  
Author(s):  
Hui Meng ◽  
Wenxue Hong ◽  
Cunguo Yu ◽  
Weili Ding ◽  
Jialin Song ◽  
...  
Keyword(s):  
Knowledge Discovery ◽  
Ordered Structure

Utilizing relative ordered structure theory to guide polysaccharide purification for structural characterization

2021 ◽  
Vol 115 ◽  
pp. 106603
Author(s):  
Yu-Xiao Wang ◽  
Jun-Yi Yin ◽  
Ting Zhang ◽  
Yue Xin ◽  
Xiao-Jun Huang ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Structure Theory ◽  
Ordered Structure

Peer Relationship Problems in Children with Tourette's Disorder or Diabetes Mellitus

1998 ◽  
Vol 39 (5) ◽  
pp. 663-668 ◽  
Author(s):  
Harry N. Bawden ◽  
Aidan Stokes ◽  
Carol S. Camfield ◽  
Peter R. Camfield ◽  
Sonia Salisbury
Keyword(s):  
Diabetes Mellitus ◽  
Peer Relationship ◽  
Tourette’S Disorder ◽  
Relationship Problems ◽  
Tourette's Disorder

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

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