Advanced optical model for the ellipsometric study of ion implantation-caused damage depth profiles in single-crystalline silicon

2003 ◽  
Author(s):  
P. Petrik ◽  
O. Polgar ◽  
M. Fried ◽  
T. Lohner ◽  
N.Q. Khanh ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Optical Model ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Depth Profiles ◽  
Damage Depth ◽  
Ellipsometric Study

Ellipsometric study of the polysilicon/thin oxide/single-crystalline silicon structure and its change upon annealing

2002 ◽  
Vol 92 (5) ◽  
pp. 2374-2377 ◽  
Author(s):  
P. Petrik ◽  
T. Lohner ◽  
M. Fried ◽  
J. Gyulai ◽  
U. Boell ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Silicon Structure ◽  
Single Crystalline ◽  
Ellipsometric Study ◽  
Thin Oxide

Modeling of Damage Accumulation during Ion Implantation into Single‐Crystalline Silicon

1997 ◽  
Vol 144 (4) ◽  
pp. 1495-1504 ◽  
Author(s):  
M. Posselt ◽  
B. Schmidt ◽  
C. S. Murthy ◽  
T. Feudel ◽  
K. Suzuki
Keyword(s):  
Ion Implantation ◽  
Damage Accumulation ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline

Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

2013 ◽  
Vol 58 (2) ◽  
pp. 142-150 ◽  
Author(s):  
A.V. Sachenko ◽  
◽  
V.P. Kostylev ◽  
V.G. Litovchenko ◽  
V.G. Popov ◽  
...  
Keyword(s):  
Surface Layer ◽  
Crystalline Silicon ◽  
Silicon Wafers ◽  
Single Crystalline Silicon ◽  
Near Surface ◽  
Single Crystalline

Dynamic Crack Propagation in Single-Crystalline Silicon

1998 ◽  
Vol 539 ◽  
Author(s):  
T. Cramer ◽  
A. Wanner ◽  
P. Gumbsch
Keyword(s):  
Crack Propagation ◽  
Crystalline Silicon ◽  
Potential Drop ◽  
Tensile Tests ◽  
Terminal Velocity ◽  
Dynamic Crack Propagation ◽  
Dynamic Crack ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Crack Propagation Velocity

AbstractTensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {110} planes in a <110> direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v = 3800 m/s, which corresponds to 83%7 of the Rayleigh wave velocity vR. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {110} plane onto {111} crystallographic facets.

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