Medium energy ion scattering analysis of damage in silicon caused by ultra-low energy boron implantation at different substrate temperatures

Author(s):  
Shenjun Zhang ◽  
J.A.V.D. Berg ◽  
D.G. Armour ◽  
S. Whelan ◽  
R.G. Goldberg ◽  
...  
1990 ◽  
Vol 202 ◽  
Author(s):  
J. Vrijmoeth ◽  
P.M. Zagwijn ◽  
J.W.M. Frenken ◽  
J.F. van der Veen

ABSTRACTThe surface structure of epitaxial NiSi2 films grown on Si (111) has been determined using a new method. The backscattering signals from subsequent Ni layers in the NiSi2 (111) surface are resolved.The topology of the NiSi2 (111) surface is concluded to be bulklike, i.e., it is terminated by a Si – Ni – Si triple layer.


2011 ◽  
Vol 605 (1-2) ◽  
pp. 220-224 ◽  
Author(s):  
Johan Gustafson ◽  
Andrew R. Haire ◽  
Christopher J. Baddeley

2007 ◽  
Vol 601 (2) ◽  
pp. 352-361 ◽  
Author(s):  
S.L. Harmer ◽  
L.V. Goncharova ◽  
R. Kolarova ◽  
W.N. Lennard ◽  
M.A. Muñoz-Márquez ◽  
...  

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