Multicharged boron ions from pure elements evaporated in a 2.45-GHz ECR source

2002 ◽  
Author(s):  
Y. Kato ◽  
A. Fukukawa ◽  
S. Ishii
Keyword(s):  
Boron Ions ◽  
Ecr Source

A SINGLE STAGE ECR SOURCE FOR THE RADIOACTIVE ION BEAM PROJECT IN LOUVAIN-LA-NEUVE

1989 ◽  
Vol 50 (C1) ◽  
pp. C1-813-C1-817
Author(s):  
M. ARNOULD ◽  
F. BAETEN ◽  
D. DARQUENNES ◽  
Th. DELBAR ◽  
C. DOM ◽  
...  
Keyword(s):  
Ion Beam ◽  
Single Stage ◽  
Radioactive Ion Beam ◽  
Ecr Source

Low Temperature Silicon Oxidation With Electron Cyclotron Resonance Oxygen Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
K. T. Sung ◽  
S. W. Pang
Keyword(s):  
Low Temperature ◽  
Microwave Power ◽  
Cyclotron Resonance ◽  
Oxygen Plasma ◽  
Permanent Magnets ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Rf Power ◽  
Source Distance ◽  
Ecr Source

ABSTRACTSilicon was oxidized at low temperature with an oxygen plasma generated by an electron cyclotron resonance (ECR) source. The ECR source utilized a multicusp magnetic field formed by permanent magnets. Microwave power at 2.45 GHz was applied to the source and if power at 13.56 MHz was applied to the sample stage. Si oxidation was studied as a function of source distance, pressure, microwave power, and rf power. The oxide thickness increases with microwave and rf power but decreases with source distance. The oxidation rate increases with pressure up to 12 mTorr, men decreases at higher pressure. The relative emission intensities in the plasma monitored using optical emission spectroscopy showed similar dependence on the source distance and microwave power. Oxidation temperature was estimated to be <100°C. Using ellipsometry and X-ray photoelectron spectroscopy, the oxidized films were found to be close to that of thermal oxide with refractive index at 1.45 and oxygen to silicon ratio of 2. From the current-voltage and capacitance-voltage measurements, the breakdown fields of these oxide films were 6.3 MV/cm and the fixed charge densities were 7×1010 cm−2.

Investigation of cross sections for the formation and destruction of negative boron ions

1999 ◽  
Vol 89 (5) ◽  
pp. 830-836 ◽  
Author(s):  
I. S. Dmitriev ◽  
Ya. A. Teplova ◽  
Yu. A. Fainberg
Keyword(s):  
Cross Sections ◽  
Boron Ions

STUDIES ON DAMAGE INDUCED BY 45 AND 80MeV BORON IONS IN CRYSTALLINE SILICON

1998 ◽  
Vol 51 (4-6) ◽  
pp. 515-516
Author(s):  
Sharad T. Chavan ◽  
Vasant N. Bhoraskar
Keyword(s):  
Crystalline Silicon ◽  
Boron Ions

Enhanced production of multicharged boron ions by approaching a boride target to an ECR zone

1996 ◽  
Vol 67 (3) ◽  
pp. 1177-1179
Author(s):  
Y. Kato ◽  
A. Fukukawa ◽  
S. Ishii
Keyword(s):  
Enhanced Production ◽  
Boron Ions

Concentration Profiles of Implanted Boron Ions in Silicon from Measurements with the Ion Microprobe

1973 ◽  
pp. 653-659
Author(s):  
G. Schwarz ◽  
M. Trapp ◽  
R. Schimko ◽  
G. Butzke ◽  
K. Rogge
Keyword(s):  
Concentration Profiles ◽  
Ion Microprobe ◽  
Boron Ions
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