Application of high-frequency short-pulsed plasma-immersion ion implantation or deposition method for dielectric materials processing using gas, metal and gas-metal plasma

2012 ◽  
Author(s):  
A. I. Ryabchikov ◽  
I. B. Stepanov ◽  
D. O. Sivin ◽  
A. I. Bumagina
Keyword(s):  
Ion Implantation ◽  
High Frequency ◽  
Dielectric Materials ◽  
Materials Processing ◽  
Pulsed Plasma ◽  
Deposition Method ◽  
Metal Plasma ◽  
Plasma Immersion Ion Implantation

Shallow P+-N Junction Fabrication by Plasma Immersion Ion Implantation

1991 ◽  
Vol 223 ◽  
Author(s):  
C. A. Pico ◽  
X. Y. Qian ◽  
E. Jones ◽  
M. A. Lieberman ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Ideality Factor ◽  
High Frequency ◽  
Cyclotron Resonance ◽  
High Field ◽  
Electron Cyclotron Resonance ◽  
Forward Bias ◽  
Electron Cyclotron ◽  
Significant Damage ◽  
Plasma Immersion Ion Implantation

ABSTRACTPlasma immersion ion implantation (PIII) has been applied to fabricate shallow p-n junction diodes and MOS test structures. BF3 ions created by an electron cyclotron resonance source were implanted into n-type Si(100) at an accelerating voltage of −2 kv. The implant doses ranged from 4 × 1014/cm2 to 4 × 1015/cm2. In some cases, the top layers of the Si(100) substrates were preamorphized by a 3 × 1015/cm2 to 1016/cm2 implant of SiF4 by PIII at −7.2 kV prior to the BF3 implant. The ideality factor exhibited in both non- and preamorphized samples during forward bias is 1.02 to 1.05. Reverse leakages were measured at 30 nA/cm2 at −5V. High frequency capacitance and high field breakdown measurements of the oxide test structures showed no significant damage to the oxide.

A high voltage pulse power supply for metal plasma immersion ion implantation and deposition

2010 ◽  
Vol 81 (12) ◽  
pp. 124703 ◽  
Author(s):  
M. C. Salvadori ◽  
F. S. Teixeira ◽  
W. W. R. Araújo ◽  
L. G. Sgubin ◽  
N. S. Sochugov ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Voltage ◽  
Power Supply ◽  
Voltage Pulse ◽  
High Voltage Pulse ◽  
Pulse Power ◽  
Pulse Power Supply ◽  
Metal Plasma ◽  
Plasma Immersion Ion Implantation

Unfiltered Aluminium Vacuum Arc Plasma Application for High-Frequency Short-Pulse Plasma Immersion Ion Implantation

2014 ◽  
Vol 880 ◽  
pp. 155-160 ◽  
Author(s):  
Alexander Ryabchikov ◽  
Denis Sivin ◽  
Anna Ivanova (Bumagina) ◽  
Evgeniy Bolbasov ◽  
Natalya Daneikina
Keyword(s):  
Ion Implantation ◽  
High Frequency ◽  
Treatment Time ◽  
Short Pulse ◽  
Substrate Surface ◽  
Pulse Plasma ◽  
Vacuum Arc ◽  
Arc Plasma ◽  
Bias Potential ◽  
Plasma Immersion Ion Implantation

This paper is devoted to the studying of the dynamical changes in the density of aluminium microparticles (MPs) on the substrate surface made of stainless steel, immersed in vacuum arc plasma, at high-frequency short-pulse negative bias potential. It is shown experimentally that the density of aluminium MPs on the substrate surface is decreased dynamically by 3 orders when the treatment time is increased from 15 s to 3 min at the bias potential –2 kV. A possibility of the application of MPs unfiltered vacuum arc plasma for high-frequency short-pulse plasma immersion ion implantation to form the intermetallic layers is discussed.

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