scholarly journals Flexible metal-oxide thin film transistor circuits for RFID and health patches

Author(s):  
P. Heremans ◽  
N. Papadopoulos ◽  
A. de Jamblinne de Meux ◽  
M. Nag ◽  
S. Steudel ◽  
...  
2020 ◽  
Vol 35 (12) ◽  
pp. 1211-1221
Author(s):  
Hong-long NING ◽  
◽  
Yu-xi DENG ◽  
Jian-lang HUANG ◽  
Zi-long LUO ◽  
...  

2021 ◽  
Vol 23 (09) ◽  
pp. 1078-1085
Author(s):  
A. Kanni Raj ◽  

Indium Lead Oxide (ILO) based Metal Oxide Thin Film Transistor (MOTFT) is fabricated with Lead Barium Zirconate (PBZ) gate dielectric. PBZ is formed over doped silicon substrate by cheap sol-gel process. Thin film PBZ is analysed with X-ray Diffraction (XRD), Ultra-Violet Visible Spectra (UV-Vis) and Atomic Force Microscope (AFM). IZO is used as bottom gate to contact Thin Film Transistor (TFT). This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent emobility 4.5cm2/V/s, with on/off ratio 5×105 and sub-threshold swing 0.35V/decade.


2020 ◽  
Vol 5 (3) ◽  
pp. 033001 ◽  
Author(s):  
Giuseppe Cantarella ◽  
Júlio Costa ◽  
Tilo Meister ◽  
Koichi Ishida ◽  
Corrado Carta ◽  
...  

2018 ◽  
Vol 65 (7) ◽  
pp. 2820-2826 ◽  
Author(s):  
Zhihe Xia ◽  
Lei Lu ◽  
Jiapeng Li ◽  
Hoi-Sing Kwok ◽  
Man Wong

2015 ◽  
Vol 3 (31) ◽  
pp. 8121-8126 ◽  
Author(s):  
Su Jeong Lee ◽  
Jieun Ko ◽  
Jee Ho Park ◽  
Jung Han Kim ◽  
Gee Sung Chae ◽  
...  

Schematic diagram of an SWCNT–AZO NP hybrid electrode TFT and the optical image of the TFT with the SWCNT/AZO NP hybrid electrodes on a PI substrate.


2016 ◽  
Vol 47 (1) ◽  
pp. 1151-1154 ◽  
Author(s):  
Jong-Heon Yang ◽  
Ji Hun Choi ◽  
Jae-Eun Pi ◽  
Hee-Ok Kim ◽  
Eun-Suk Park ◽  
...  

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