Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ∼ Impact of charge-centroid in the channel due to quantum effect on 1/f noise ∼
1988 ◽
Vol 132
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pp. 501-506
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1988 ◽
Vol 46
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pp. 418-419
1975 ◽
Vol 33
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pp. 280-281
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1991 ◽
Vol 49
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pp. 756-757
1995 ◽
Vol 53
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pp. 256-257
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1986 ◽
Vol 6
(2)
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pp. 201-211
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2020 ◽
Vol 4
(3)
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pp. 329-337
2017 ◽
Vol 2017
(45)
◽
pp. 83-89
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