The origin of secondary electron gate current: a multiple-stage Monte Carlo study for scaled, low-power flash memory

2002 ◽  
Author(s):  
D.L. Kencke ◽  
X. Wang ◽  
H. Wang ◽  
Q. Ouyang ◽  
S. Jallepalli ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Low Power ◽  
Flash Memory ◽  
Secondary Electron ◽  
Monte Carlo Study ◽  
Gate Current

An Experimental and Monte Carlo Study of Secondary Electron Emission from Elemental Solids

2008 ◽  
Vol 14 (S2) ◽  
pp. 944-945
Author(s):  
CGH Walker ◽  
MM El-Gomati ◽  
AMD Assa'd ◽  
M Zadražil
Keyword(s):  
Monte Carlo ◽  
New Mexico ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Monte Carlo Study

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

scholarly journals Monte Carlo Study of the Lateral Distribution of Gate Current Density Along the Channel of Submicron LDD MOSFET's

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 301-304 ◽  
Author(s):  
A. Harkar ◽  
R. W. Kelsall ◽  
J. N. Ellis
Keyword(s):  
Monte Carlo ◽  
Spatial Distribution ◽  
Current Density ◽  
Monte Carlo Study ◽  
Hot Electrons ◽  
Gate Current ◽  
Enhancement Technique ◽  
Drain Side ◽  
Full Band ◽  
Monte Carlo Simulator

This paper presents the spatial distribution of hot electrons along the channel of a 0.35 micron MOSFET using the full band pseudopotential Monte Carlo simulator DAMOCLES. The important aspect of this investigation is the implementation of a rigorous statistical enhancement technique along the channel of the device, to probe the hot electrons generated along the channel. Simulations have been carried out for different bias points. The results clearly show that the probability of generating electrons with energies sufficient for injection into the oxide layer is significant only at the drain side of the device. It is also observed that the peak gate current occurs exactly just inside the LDD region coincident with the position of maximum lateral electric field.

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