Design and Fabrication of a High Temperature (250 °C Baseplate), High Power Density Silicon Carbide (SiC) Multichip Power Module (MCPM) Inverter

2006 ◽  
Author(s):  
Edgar Cilio ◽  
Jared Hornberger ◽  
Brice McPherson ◽  
Roberto Schupbach ◽  
Alexander Lostetter
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Density ◽  
High Power ◽  
High Power Density ◽  
Power Module

A High Temperature, High Power Density Package for SiC and GaN Power Devices

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000208-000213 ◽  
Author(s):  
Z. Cole ◽  
B. McGee ◽  
J. Stabach ◽  
C. B. O'Neal ◽  
B. Passmore
Keyword(s):  
High Temperature ◽  
Power Density ◽  
High Power ◽  
Mechanical Design ◽  
Three Dimensional ◽  
High Power Density ◽  
Power Module ◽  
Modeling And Analysis ◽  
Low Profile ◽  
Three Dimensional Finite Element

In this work, a compact 600 – 1700 V high current power package housing either silicon carbide (SiC) or gallium nitride (GaN) power die was designed and developed. Several notable configurations of the package include diode half-bridges, co-packed MOSFET-diode pairs, and cascode configured GaN devices. In order to avoid a significant redesign effort for each new application or improvement in device technology, a device-neutral design strategy enables the use of a variety of die types from any manufacturer depending on the end-use application's requirements. The basic SOT-227 is a widely used package type found in everything from electronic welders and power supplies to motor controls and inverters. This module is a variant of that style of package which also addresses some issues that a standard SOT-227 package has when used in higher voltage applications; it has increased creepage and clearance distances which meet IPC, UL, and IEC standards up to 1700 volts while retaining an isolated substrate. It also has low parasitic values in comparison to the SOT-227. One of the key elements of this design is the removal of the baseplate. This allows for far lower weight, volume, and cost as well as reduced manufacturing complexity. The wide bandgap power package is composed of high temperature capable materials, which allow for the high junction temperatures inherent in these high power density devices. This paves the way for the design of a small, low-profile package with low parasitic inductances and a small junction-to-case thermal resistance. This paper will discuss the mechanical design of the power package as well as the three-dimensional finite-element modeling and analysis of the thermal, electrical, and mechanical characteristics. In addition, the electrical characteristics as a function of temperature of the power module up to 225 °C will be presented.

Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density

2013 ◽  
Vol 303-306 ◽  
pp. 1902-1907 ◽  
Author(s):  
Yi Bo Wu ◽  
Guo You Liu ◽  
Ning Hua Xu ◽  
Ze Chun Dou
Keyword(s):  
Thermal Resistance ◽  
Power Density ◽  
High Power ◽  
Resistance Management ◽  
Equivalent Circuit Model ◽  
Element Model ◽  
Equivalent Model ◽  
High Power Density ◽  
Power Module ◽  
Igbt Module

As the IGBT power modules have promising potentials in the application of the field of traction or new energy, the higher power density and higher current rating of the IGBT module become more and more attractive. Thermal resistance is one of the most important characteristics in the application of power semiconductor module. A new 1500A/3300V IGBT module in traction application is developed successfully by Zhuzhou CSR Times Electric Co., Ltd (Lincoln). Thermal resistance management of this IGBT module with high power density is performed in this paper. Based on thermal nodes network, an equivalent circuit model for thermal resistance of power module is highlighted from which the steady state thermal resistance can be optimized by theoretical analysis. Furthermore, thermal numerical simulation of 1500A/3300V IGBT module is accomplished by means of finite element model (FEM). Finally, the thermal equivalent model of the IGBT module is verified by simulation results.

Packaging of High Frequency, High Temperature Silicon Carbide (SiC) Multichip Power Module (MCPM) Bi-directional Battery Chargers for Next Generation Hybrid Electric Vehicles

2012 ◽  
Vol 2012 (1) ◽  
pp. 001105-001115 ◽  
Author(s):  
Z. Cole ◽  
B. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Power Density ◽  
Hybrid Electric Vehicle ◽  
Peak Power ◽  
Mechanical Design ◽  
Next Generation ◽  
Power Module ◽  
Modeling And Analysis ◽  
Hybrid Electric

The packaging design and development of an on-board bi-directional charger for the battery system of the next generation Toyota Prius plug-in hybrid electric vehicle (PHEV) will be presented in this paper. The charger implements a multichip power module (MCPM) packaging strategy. The Silicon Carbide (SiC) MCPM charger is capable of operating to temperatures in excess of 200°C and at switching frequencies in excess of 500 kHz, significantly reducing the overall size and weight of the system in comparison with Toyota's present silicon-based Prius charger. The present actively cooled Si charger is capable of delivering a peak power of 1kW at less than 90 percent efficiency, is limited to less than 50 kHz switching, and measures greater than 6.3 liters with a mass of 6.6 kg, resulting in a power density of 150 W/kg. The passively cooled SiC MCPM charger presented herein was designed to deliver a peak power of 5 kW at greater than 96% efficiency, while measuring less than 0.9 liters with a mass of 1 kg, resulting in a power density greater than 5 kW/kg. Thus, the novel SiC MCPM charger represents an increase in power density of more than 30×, a very significant power density achievement in size and weight for sensitive mobile applications such as PHEVs. This paper will discuss the overall mechanical design of the SiC MCPM charger, the finite-element modeling and analysis of thermal and stress considerations, characterization and parasitic analysis of the MCPM, and the development of high temperature solutions for SiC devices.

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