Band-Alignment of ZnSe/ZnSSe Based Layer Structures for Light Emitting Devices, Determination by Photocurrent Measurements

2006 ◽  
Author(s):  
R. Adhiri ◽  
E. H. Atmani ◽  
M. Moussetad ◽  
A. Fahli ◽  
A. Jaouad ◽  
...  
Keyword(s):  
Band Alignment ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Layer Structures

scholarly journals Operation lifetimes of organic light-emitting devices with different layer structures

2005 ◽  
Vol 402 (4-6) ◽  
pp. 335-339 ◽  
Author(s):  
Jiun-Haw Lee ◽  
JianJang Huang ◽  
Chi-Chih Liao ◽  
Pier-Jy Hu ◽  
Yih Chang
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Layer Structures ◽  
Organic Light Emitting Devices

Light-Emitting Devices Based on Gallium Nitride and Related Compound Semiconductors

1995 ◽  
Vol 395 ◽  
Author(s):  
M. Koike ◽  
N. Shibata ◽  
S. Yamasaki ◽  
S. Nagai ◽  
S. Asami ◽  
...  
Keyword(s):  
Blue Light ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Optical Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Uv Emission ◽  
Double Heterostructures ◽  
Transmission Electron ◽  
Layer Structures

ABSTRACTAsymmetric double heterostructures (ADH) of AlGaN/GaInN/GaN blue light emitting diodes (LEDs) and GaInN/GaN multiple quantum well (MQW) LEDs were fabricated by metalorganic vapor phase epitaxy (MOVPE). The ADH LEDs had spectral emissions peaking at 450 nm and the luminous intensify was 2.5 cd at 20 mA The output power was 3.6 mW at 20mA and the external quantum efficiency was as high as 5.1 % at 20 mA. The GaInN/GaN MQW structure was grown successfully by MOVPE. Fine multi-layer structures 7 – 9 nm thick were detected by secondary ion mass spectroscopy and transmission electron microscopy (TEM). The dislocation density in the MQW was as high as 0.5–2×109 cm−2 by TEM The optical efficiency of the MQW layer was higher than that of a bulk GalnN layer. The intensity of UV emission from MQW LEDs was greater than that of blue light from ADH blue LEDs. The UV emission increased as a super-linear function of injection current at -100°C.

Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

2001 ◽  
Vol 171 (8) ◽  
pp. 857 ◽  
Author(s):  
Igor L. Krestnikov ◽  
V.V. Lundin ◽  
A.V. Sakharov ◽  
D.A. Bedarev ◽  
E.E. Zavarin ◽  
...  
Keyword(s):  
Light Emitting ◽  
Group Iii ◽  
Light Emitting Devices

Probing local photophysical properties in perovskite based light-emitting devices

2019 ◽  
Author(s):  
Miguel Anaya ◽  
Kyle Frohna ◽  
Linsong Cui ◽  
Javad Shamsi ◽  
Sam Stranks
Keyword(s):  
Photophysical Properties ◽  
Light Emitting ◽  
Light Emitting Devices
Sign in / Sign up

Export Citation Format

Share Document