500MSPS with 80dB SFDR SHA for Time interleaved application using LATERAL PNP in CMOS process

Author(s):  
M.Reza Ghajar ◽  
Arash Mirhaj ◽  
Omid Shoaei
Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1551 ◽  
Author(s):  
Jianwen Li ◽  
Xuan Guo ◽  
Jian Luan ◽  
Danyu Wu ◽  
Lei Zhou ◽  
...  

This paper presents a four-channel time-interleaved 3GSps 12-bit pipelined analog-to-digital converter (ADC). The combination of master clock sampling and delay-adjusting is adopted to remove the time skew due to channel mismatches. An early comparison scheme is used to minimize the non-overlapping time, where a custom-designed latch is developed to replace the typical non-overlapping clock generator. By using the dither capacitor to generate an equivalent direct current input, a zero-input-based calibration is developed to correct the capacitor mismatch and inter-stage gain error. Fabricated in a 40 nm CMOS process, the ADC achieves a signal-to-noise-and-distortion ratio (SNDR) of 57.8 dB and a spurious free dynamic range (SFDR) of 72 dB with a 23 MHz input tone. It can achieve an SNDR above 52.3 dB and an SFDR above 61.5 dB across the entire first Nyquist zone. The differential and integral nonlinearities are −0.93/+0.73 least significant bit (LSB) and −2.8/+4.3 LSB, respectively. The ADC consumes 450 mW powered at 1.8V, occupies an active area of 3 mm × 1.3 mm. The calculated Walden figure of merit reaches 0.44 pJ/step.


Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 305 ◽  
Author(s):  
Dong Wang ◽  
Xiaoge Zhu ◽  
Xuan Guo ◽  
Jian Luan ◽  
Lei Zhou ◽  
...  

This paper presents an eight-channel time-interleaved (TI) 2.6 GS/s 8-bit successive approximation register (SAR) analog-to-digital converter (ADC) prototype in a 55-nm complementary metal-oxide-semiconductor (CMOS) process. The channel-selection-embedded bootstrap switch is adopted to perform sampling times synchronization using the full-speed master clock to suppress the time skew between channels. Based on the segmented pre-quantization and bypass switching scheme, double alternate comparators clocked asynchronously with background offset calibration are utilized in sub-channel SAR ADC to achieve high speed and low power. Measurement results show that the signal-to-noise-and-distortion ratio (SNDR) of the ADC is above 38.2 dB up to 500 MHz input frequency and above 31.8 dB across the entire first Nyquist zone. The differential non-linearity (DNL) and integral non-linearity (INL) are +0.93/−0.85 LSB and +0.71/−0.91 LSB, respectively. The ADC consumes 60 mW from a 1.2 V supply, occupies an area of 400 μm × 550 μm, and exhibits a figure-of-merit (FoM) of 348 fJ/conversion-step.


2015 ◽  
Vol 50 (11) ◽  
pp. 2692-2702 ◽  
Author(s):  
Kristian N. Madsen ◽  
Timothy D. Gathman ◽  
Saeid Daneshgar ◽  
Thomas C. Oh ◽  
James Chingwei Li ◽  
...  

2021 ◽  
Author(s):  
Shaul Peker

This thesis examines the theory and design of incremental Sigma-Delta (ΣΔ) modulators when applied to complex oversampling analog-to-digital converters (ADCs). Two different types of approaches for the complex ADC are analysed and compared. The first system is a traditional complex bandpass over-sampling ADC with incremental (time limited) ΣΔ architecture. This system uses cross-coupling switch capacitor (SC) integrators and quadrature two channel inputs. The second system uses a low-pass architecture with time interleaved integrators. This system does not have a mismatch between the in-phase and quadrature phase (I/Q) output channels. The input is frequency shifted down to DC during the conversion. A graphical user interface (GUI) design toolbox was created to design and simulate the two types of systems. The bandpass second-order system was fabricated in an IBM 130nm CMOS process with a 83kHz two channel input and 10kHz bandwidth at an OSR of 24.


2021 ◽  
Author(s):  
Shaul Peker

This thesis examines the theory and design of incremental Sigma-Delta (ΣΔ) modulators when applied to complex oversampling analog-to-digital converters (ADCs). Two different types of approaches for the complex ADC are analysed and compared. The first system is a traditional complex bandpass over-sampling ADC with incremental (time limited) ΣΔ architecture. This system uses cross-coupling switch capacitor (SC) integrators and quadrature two channel inputs. The second system uses a low-pass architecture with time interleaved integrators. This system does not have a mismatch between the in-phase and quadrature phase (I/Q) output channels. The input is frequency shifted down to DC during the conversion. A graphical user interface (GUI) design toolbox was created to design and simulate the two types of systems. The bandpass second-order system was fabricated in an IBM 130nm CMOS process with a 83kHz two channel input and 10kHz bandwidth at an OSR of 24.


2003 ◽  
Vol 766 ◽  
Author(s):  
J. Gambino ◽  
T. Stamper ◽  
H. Trombley ◽  
S. Luce ◽  
F. Allen ◽  
...  

AbstractA trench-first dual damascene process has been developed for fat wires (1.26 μm pitch, 1.1 μm thickness) in a 0.18 μm CMOS process with copper/fluorosilicate glass (FSG) interconnect technology. The process window for the patterning of vias in such deep trenches depends on the trench depth and on the line width of the trench, with the worse case being an intermediate line width (lines that are 3X the via diameter). Compared to a single damascene process, the dual damascene process has comparable yield and reliability, with lower via resistance and lower cost.


2009 ◽  
Vol E92-C (2) ◽  
pp. 258-268 ◽  
Author(s):  
Ying-Zu LIN ◽  
Soon-Jyh CHANG ◽  
Yen-Ting LIU
Keyword(s):  

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