CMOS Gate Oxide Integrity Failure Structure Analysis Using Transmission Electron Microscopy

Author(s):  
Y. Li ◽  
S. Tan ◽  
H. Kuan ◽  
K. Tan ◽  
L. Duan
Materia Japan ◽  
2001 ◽  
Vol 40 (12) ◽  
pp. 1013-1013
Author(s):  
Toyohiro Chikyo ◽  
Tamami Naruke ◽  
Parhat Ahmet ◽  
Min Zhu ◽  
Takashi Suemasu ◽  
...  

Author(s):  
L. F. Fu ◽  
Y. C. Wang ◽  
B. Jiang ◽  
F. Shen ◽  
M. Strauss ◽  
...  

Abstract Recent developments in aberration-corrected transmission electron microscopy have drawn much attention from the semiconductor characterization community. Two new developments in transmission electron microscopy, image aberration correctors and probe aberration correctors, are discussed in term of their applications in characterizing gate oxide dielectrics for the IC industry.


2012 ◽  
Vol 18 (S2) ◽  
pp. 514-515
Author(s):  
J. Yamasaki ◽  
N. Tanaka ◽  
S. Inamoto ◽  
Y. Nomura ◽  
K. Okazaki-Maeda

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.


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