The particle-size-controllable growth of silica sol abrasive for chemical mechanical polishing

2006 ◽  
Author(s):  
Peng Gao ◽  
Yuling Liu ◽  
Suying Yao ◽  
Jianxin Zhang
Keyword(s):  
Particle Size ◽  
Chemical Mechanical Polishing ◽  
Silica Sol ◽  
Mechanical Polishing ◽  
Controllable Growth

Chemical Mechanical Polishing Slurry for Tungsten in ULSI With Large Particle Size Colloidal Silica Nano-Abrasive

2005 ◽  
Author(s):  
Kailiang Zhang ◽  
Zhitang Song ◽  
Songlin Feng
Keyword(s):  
Surface Roughness ◽  
Particle Size ◽  
Zeta Potential ◽  
Chemical Mechanical Polishing ◽  
Large Particle ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Silica Sol ◽  
Mechanical Polishing ◽  
Large Particle Size

Silica sol nano-abrasives with large particle are prepared and characterized by TEM, PCS and Zeta potential in this paper. Results show that the silica sol nano-abrasives about 100nm are of higher stability (Zeta potential: −65mV) and narrow distribution of particle size. And then alkali CMP slurries for tungsten containing self-made silica sol nano-abrasives are prepared and applied. CMP results show that the removal rate has been improved to 367nm/min and the RMS of surface roughness has been reduced from 4.4nm to 0.80nm. In sum, one kind of alkali slurry containing 100nm silica sol for tungsten CMP is studied.

The Study of Silica Sol with Great Particle Size for the SiO2 Dielectric CMP

2013 ◽  
Vol 652-654 ◽  
pp. 2228-2231
Author(s):  
Juan Wang ◽  
Ming Sun ◽  
Xia Jiang ◽  
Yan Zhang
Keyword(s):  
Particle Size ◽  
Chemical Mechanical Polishing ◽  
Water Solubility ◽  
Silica Sol ◽  
Mechanical Polishing ◽  
Particle Sizes ◽  
Oxidation Reduction

The most widely used Chemical Mechanical Polishing (CMP) process and most difficulty is the SiO2 dielectric CMP in ULSI. SiO2 cannot be removed by oxidation-reduction because Silicon is already quadrivalence. So we adopt water-solubility SiO2 growing directly from water which size can arrive 110~130nm to improve the polishing rate. The growth of silica sol is studied and the silica sol whose particle sizes can reach 120nm is gained.

Abrasive Effects in Oxide Chemical Mechanical Polishing

1999 ◽  
Vol 566 ◽  
Author(s):  
Uday Mahajan ◽  
Marc Bielmann ◽  
Rajiv K. Singh
Keyword(s):  
Particle Size ◽  
Surface Morphology ◽  
Surface Area ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Sol Gel ◽  
Mechanical Polishing ◽  
Size Distributions ◽  
Abrasive Properties

In this study, we have characterized the effects of abrasive properties, primarily particle size, on the Chemical Mechanical Polishing (CMP) of oxide films. Sol-gel silica particles with very narrow size distributions were used for preparing the polishing slurries. The results indicate that as particle size increases, there is a transition in the mechanism of material removal from a surface area based mechanism to an indentation-based mechanism. In addition, the surface morphology of the polished samples was characterized, with the results showing that particles larger than 0.5 μm are detrimental to the quality of the SiO2 surface.

Effect of Different Abrasives on Chemical Mechanical Polishing for Magnesia Alumina Spinel

2020 ◽  
Vol 866 ◽  
pp. 115-124
Author(s):  
Zhan Kui Wang ◽  
Ming Hua Pang ◽  
Jian Xiu Su ◽  
Jian Guo Yao
Keyword(s):  
Particle Size ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Key Factors ◽  
Particle Size Analyzer ◽  
Scanning Electron ◽  
Shape And Size

In this paper, a series of chemical mechanical polishing (CMP) experiments for magnesia alumina (Mg-Al) spinel were carried out with different abrasives, and the materials removal rate (MRR) and surface quality was evaluated to explore their different effects. The scanning electron microscope (SEM) and laser particle size analyzer were also employed to test the micro-shape and size distribution of abrasives. Then, the mechanism of different effects with different abrasives was analyzed in CMP for Mg-Al spinel. Those experimental results suggest that different subjecting pressure ratios of abrasives to polishing pad with different abrasive are the key factors leading to difference polishing performances in CMP.

scholarly journals Effect of Particle Size and pH Value of Slurry on Chemical Mechanical Polishing of SiO2 Film

2022 ◽  
Author(s):  
Fan Xu ◽  
Weilei Wang ◽  
Aoxue Xu ◽  
Daohuan Feng ◽  
Weili Liu ◽  
...  
Keyword(s):  
Activation Energy ◽  
Particle Size ◽  
Chemical Mechanical Polishing ◽  
Ph Value ◽  
Removal Rate ◽  
Mechanical Action ◽  
Sio2 Film ◽  
Mechanical Polishing ◽  
Chemical Action ◽  
Effect Of Particle Size

Abstract This study investigated the effects of particle size and pH of SiO2-based slurry on chemical mechanical polishing for SiO2 film. It was found that the removal rates and surface roughness of the material was highly dependent on the particle size and pH. As the particle size varied, the main polishing mechanism provided the activation energy to mechanical erasure. In addition, pH affected the particle size and Zeta potential, which had an important effect on the strength of the mechanical and chemical action of the chemical mechanical polishing. The change in mechanical action greatly influenced the removal rate. According to the experimental results, the best polishing of SiO2 film was achieved with 40 nm particle size SiO2 abrasives when the pH was 4.

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