Correlation of large particle count data in CMP slurry with production wafer defects

Author(s):  
Jonathan Bennett ◽  
Michael A. Fury
2002 ◽  
Vol 16 (3) ◽  
pp. 164-170 ◽  
Author(s):  
J. Bridgeman ◽  
J. S. Simms ◽  
S. A. Parsons

2009 ◽  
Vol 1157 ◽  
Author(s):  
Bruno Tolla ◽  
David Boldridge

AbstractWe have examined the Large Particle Count (LPC) analytical method to see whether there are opportunities to improve both the accuracy and precision in hope of improving the utility of the LPC measurement. We have identified weaknesses in the current method that limit both its accuracy and its precision, and which can introduce count errors in excess of a factor of 10. We propose modifications to the current method which result in both accuracy and precision improvements. We recommend these improvements as absolutely necessary for any experiments designed to test the correlation between LPC and defectivity.


2007 ◽  
Vol 991 ◽  
Author(s):  
Yun Zhuang ◽  
Yasa Adi Sampurno ◽  
Fransisca Sudargho ◽  
Geoff Steward ◽  
Herbert Barthel ◽  
...  

ABSTRACTIn this study, different amounts of standard fumed silica and fumed silica contaminated by coarse particles was added as powder to a standard copper CMP slurry to investigate their effects on large particle count, mean particle size, slurry viscosity, frictional force during wafer polishing, and copper removal rate. Standard silica powder consisted of the same particles used in the standard slurry while contaminated silica powder consisted of the same particles used in the standard slurry and additional large size particles. Large particle count analysis indicated that slurry dispersion itself generated large size particles in the slurries. The addition of 0.3% and 1% contaminated silica to the standard slurry caused significant increases in large particle count, and the mean particle size increased with the amount of contaminated silica added to the standard slurry. The slurry viscosity generally increased with the amount of standard and contaminated silica added to the standard slurry under the shear rate of 100 s−1. The standard slurry and slurries added with 0.3% and 1% contaminated silica were used to polish 200-mm blanket copper wafers on the APD-500 polisher that has the unique ability to measure frictional force in real time during polishing. The coefficient of friction increased with the amount of contaminated silica added to the standard slurry. In general, the removal rates for the slurry added with 1% contaminated silica were higher than the standard slurry and slurry added with 0.3% contaminated silica.


2006 ◽  
Vol 153 (5) ◽  
pp. G453 ◽  
Author(s):  
Edward E. Remsen ◽  
Sriram Anjur ◽  
David Boldridge ◽  
Mungai Kamiti ◽  
Shoutian Li ◽  
...  

1996 ◽  
Vol 24 (3) ◽  
pp. 217-219
Author(s):  
P. A. Lawless
Keyword(s):  

1969 ◽  
Vol 158 (3 Liquid-Borne) ◽  
pp. 612-621
Author(s):  
Erwin A. Kirnbauer ◽  
Charles H. Hacker
Keyword(s):  

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