High gain avalanche photodiode (APD) arrays in flow cytometer opitical system

2011 ◽  
Author(s):  
Shutao Zhao ◽  
Xiaodong Wu ◽  
Yongqin Chen ◽  
Ce Wang ◽  
Yuguo Tang
Keyword(s):  
Avalanche Photodiode ◽  
High Gain ◽  
Flow Cytometer

Improved dual-carrier high gain impact ionization engineered avalanche photodiode

2012 ◽  
Author(s):  
Jun Huang ◽  
Koushik Banerjee ◽  
Siddhartha Ghosh ◽  
Majeed M. Hayat
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiode ◽  
High Gain

Photon detection with high gain avalanche photodiode arrays

1998 ◽  
Vol 45 (3) ◽  
pp. 720-723 ◽  
Author(s):  
S. Vasile ◽  
P. Gothoskar ◽  
R. Farrell ◽  
D. Sdrulla
Keyword(s):  
Avalanche Photodiode ◽  
High Gain ◽  
Photon Detection ◽  
Photodiode Arrays

IIA-4 a high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current

1981 ◽  
Vol 28 (10) ◽  
pp. 1212-1212 ◽  
Author(s):  
S.R. Forrest ◽  
O.K. Kim ◽  
W.A. Bonner ◽  
R.G. Smith ◽  
G.F. Williams
Keyword(s):  
Leakage Current ◽  
Avalanche Photodiode ◽  
High Gain

Design of Amplifying Circuit for Receiving Weak Signal for Laser Fuze

2013 ◽  
Vol 300-301 ◽  
pp. 1012-1017
Author(s):  
Bing Ting Zha ◽  
He Zhang ◽  
Jun Hong Wang ◽  
Jing Guo
Keyword(s):  
Small Volume ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Low Noise ◽  
Weak Signal ◽  
Echo Signal ◽  
Long Distance ◽  
Detection Range ◽  
Simulation And Experiment ◽  
Processing Circuit

The echo signal received by laser fuze was very weak when the detection range increased. In order to expand the operating range of fuze, the reception capacity of fuze for weak signal should be improved. According to the requirements of long-range laser fuze receiving system as small volume, low-power, low-noise, high-gain, the amplifying circuit of the receiving system was analyzed and designed. To improve the ability of laser fuze for detecting weak signal, the high-sensitive, low-noise, inner-gain avalanche photodiode (APD) was used as a photodetector in the system, and the low-noise preamplifier and voltage amplifying circuit was designed. The noise and frequency response of the amplifying circuit was researched and analyzed by simulation and experiment. The results show that the design is effective and feasible, which can meet the requirements of processing circuit as receiving weak signal from long-distance.

Photodetection Technology Based on Laser Coding Emission

2011 ◽  
Vol 189-193 ◽  
pp. 3745-3749 ◽  
Author(s):  
Jing Guo ◽  
He Zhang ◽  
Xiang Jin Zhang ◽  
Xiao Feng Wang
Keyword(s):  
High Sensitivity ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Low Noise ◽  
High Signal ◽  
Weak Signal ◽  
Echo Signal ◽  
Long Distance ◽  
The Poor ◽  
Theory And Experiment

For the extremely weak echo signal and the poor anti-interference ability of the long-distance laser fuze, the high signal noise ratio (SNR) receiving system based on laser coding mode was designed. In order to improve the weak signal receiving ability, the avalanche photodiode (APD) with high sensitivity, low noise and high gain was adopted. And the optimum multiplication factor of APD when the system obtains the highest SNR was analyzed and calculated. Then, the amplifying circuit optimum matching with APD and the decoding circuit were designed, and validated by the experiments. The theory and experiment results indicate that the design is efficiency and capable to the long distance laser fuze, the system can exactly decode the weak laser coding signals received and export the ignition signal.

III-NITRIDE/SiC SEPARATE ABSORPTION AND MULTIPLICATION AVALANCHE PHOTODIODES: THE IMPORTANCE OF CONTROLLING POLARIZATION-INDUCED INTERFACE CHARGE

2011 ◽  
Vol 20 (03) ◽  
pp. 487-496
Author(s):  
ANAND V. SAMPATH ◽  
R. W. ENCK ◽  
H. SHEN ◽  
M. WRABACK ◽  
Q. ZHOU ◽  
...  
Keyword(s):  
Electric Field ◽  
Wide Spectrum ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Total Density ◽  
Field Profile ◽  
Device Structure ◽  
Absorption Region ◽  
Interface Charge ◽  
Electric Field Profile

A III-Nitride/ SiC separate absorption and multiplication avalanche photodiode (SAM-APD) offers a novel approach for fabricating high gain photodetectors with tunable absorption over a wide spectrum from the visible to deep ulltraviolet. However, unlike conventional heterojunction SAM APDs, the formation of polarization-induced charge at the hetero-interface arising from spontaneous and piezoelectric polarization can dramatically affect the performance of this detector. In this paper we report on the role of this interface charge on the performance of GaN / SiC SAM APDs. Simulations of the electric field profile within this device structure while biased near avalanche breakdown indicate that the density of positive interface charge may be sufficient to confine the electric field within the SiC multiplication region with negligible punch-through into the GaN absorption region, a distribution that is likely undesirable for efficient collection of photo-generated holes due to the presence of defects at the hetero-interface. Simulations further show that the incorporation of a p -type doped interface charge control layer at the hetero-interface can modify the total density of charge at the interface and allow for the tailoring of the electric field profile within this device. Experimental results are provided that correlate well with the simulation results.

High Gain-Bandwidth Waveguide Coupled Silicon Germanium Avalanche Photodiode

2020 ◽  
Author(s):  
Olivier Carpentier ◽  
Alireza Samani ◽  
Maxime Jacques ◽  
Eslam El-Fiky ◽  
Md Samuil Alam ◽  
...  
Keyword(s):  
Silicon Germanium ◽  
Avalanche Photodiode ◽  
High Gain ◽  
Gain Bandwidth
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