IGBT gate drive circuit with in-built protection and immunity to transient fault

2005 ◽  
Author(s):  
B. Majumdar ◽  
P. Mukherjee ◽  
F.A. Talukdar ◽  
S.K. Biswas
Keyword(s):  
Transient Fault ◽  
Drive Circuit

Cost-Effective Lock-Stepped EDDI: Transient Fault Detection Mechanism

2012 ◽  
Vol 35 (12) ◽  
pp. 2562
Author(s):  
Chao WANG ◽  
Zhong-Chuan FU ◽  
Hong-Song CHEN ◽  
Gang CUI
Keyword(s):  
Fault Detection ◽  
Cost Effective ◽  
Detection Mechanism ◽  
Transient Fault

scholarly journals Response characteristics of conductance sensor and optimization of control-drive circuit in horizontal pipes

2019 ◽  
Vol 10 (1) ◽  
pp. 217-231
Author(s):  
He Li ◽  
Yongqiang Cui ◽  
Jun Li ◽  
Fengda Zhao ◽  
Weihang Kong ◽  
...  
Keyword(s):  
Horizontal Pipes ◽  
Response Characteristics ◽  
Drive Circuit

scholarly journals A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

Energies ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2449
Author(s):  
Hongyan Zhao ◽  
Jiangui Chen ◽  
Yan Li ◽  
Fei Lin
Keyword(s):  
Thermal Conductivity ◽  
Breakdown Voltage ◽  
Basic Principle ◽  
Double Pulse ◽  
Experimental Results ◽  
Switching Frequency ◽  
Turn On ◽  
Proof Testing ◽  
Gate Driver ◽  
Drive Circuit

Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity. These advantages enable the SiC MOSFET to operate at higher switching frequencies, while, as the switching frequency increases, the turn-on loss accounts for most of the loss. This characteristic severely limits the applications of the SiC MOSFET at higher switching frequencies. Accordingly, an SRD-type drive circuit for a SiC MOSFET is proposed in this paper. The proposed SRD-type drive circuit can suppress the turn-on oscillation of a non-Kelvin packaged SiC MOSFET to ensure that the SiC MOSFET can work at a faster turn-on speed with a lower turn-on loss. In this paper, the basic principle of the proposed SRD-type drive circuit is analyzed, and a double pulse platform is established. For the purpose of proof-testing the performance of the presented SRD-type drive circuit, comparisons and experimental verifications between the traditional gate driver and the proposed SRD-type drive circuit were conducted. Our experimental results finally demonstrate the feasibility and effectiveness of the proposed SRD-type drive circuit.

Efficient gate drive circuit for IGBT

2012 ◽  
Author(s):  
M. Rata ◽  
G. Rata ◽  
L. Mandici ◽  
D. Cemomazu ◽  
C. Prodan ◽  
...  
Keyword(s):  
Drive Circuit

scholarly journals Novel transient-fault detection circuit featuring enhanced bulk built-in current sensor with low-power sleep-mode

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1781-1786 ◽  
Author(s):  
R. Possamai Bastos ◽  
F. Sill Torres ◽  
G. Di Natale ◽  
M. Flottes ◽  
B. Rouzeyre
Keyword(s):  
Fault Detection ◽  
Low Power ◽  
Current Sensor ◽  
Sleep Mode ◽  
Transient Fault ◽  
Detection Circuit
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