Effects of Bonding Parameters on the Lighting Performance of High Power LEDs Fabricated by Thermosonic Flip Chip Bonding

2006 ◽  
Author(s):  
Kun Zhao ◽  
Jianhua Zhang ◽  
Ji'an Duan
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Bonding Parameters ◽  
Flip Chip Bonding

Flip-Chip Bonding Packaged THz Photodiode With Broadband High-Power Performance

2014 ◽  
Vol 26 (24) ◽  
pp. 2462-2464 ◽  
Author(s):  
Jhih-Min Wun ◽  
Cheng-Hung Lai ◽  
Nan-Wei Chen ◽  
John E. Bowers ◽  
Jin-Wei Shi
Keyword(s):  
High Power ◽  
Flip Chip ◽  
Power Performance ◽  
Flip Chip Bonding

Fully integrated low-power flip chip bonding of arrayed optoelectronic devices on SOS

2002 ◽  
Author(s):  
Ronald E. Reedy ◽  
Hal Anthony ◽  
Charles Kuznia ◽  
Mike Pendelton ◽  
Jim Cable ◽  
...  
Keyword(s):  
Low Power ◽  
Flip Chip ◽  
Optoelectronic Devices ◽  
Fully Integrated ◽  
Flip Chip Bonding

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

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