A low voltage high output impedance bulk driven regulated cascode current mirror

2011 ◽  
Author(s):  
Naresh Lakkamraju ◽  
Ashis Kumar Mal
Keyword(s):  
Low Voltage ◽  
Current Mirror ◽  
Output Impedance ◽  
High Output Impedance ◽  
Cascode Current Mirror ◽  
High Output

Low power high output impedance high bandwidth QFGMOS current mirror

2014 ◽  
Vol 45 (8) ◽  
pp. 1132-1142 ◽  
Author(s):  
Nikhil Raj ◽  
Ashutosh Kumar Singh ◽  
Anil Kumar Gupta
Keyword(s):  
Low Power ◽  
Current Mirror ◽  
Output Impedance ◽  
High Bandwidth ◽  
High Output Impedance ◽  
High Output

A very-high output impedance charge pump for low-voltage low-power PLLs

2009 ◽  
Vol 40 (6) ◽  
pp. 1026-1031 ◽  
Author(s):  
L.-F. Tanguay ◽  
M. Sawan ◽  
Y. Savaria
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Charge Pump ◽  
Output Impedance ◽  
High Output Impedance ◽  
Very High ◽  
High Output

A Low-Voltage Low-Power Resistor-Based Current Mirror and Its Applications

2017 ◽  
Vol 26 (11) ◽  
pp. 1750180 ◽  
Author(s):  
Leila Safari ◽  
Shahram Minaei
Keyword(s):  
Output Voltage ◽  
High Performance ◽  
Low Voltage ◽  
Supply Voltage ◽  
Input Voltage ◽  
Cmos Technology ◽  
Current Mirror ◽  
Output Impedance ◽  
High Cmrr ◽  
High Output Impedance

In this paper, a CMOS resistor-based current mirror (RBCM) aimed to be used in low-voltage applications is presented. The main features of the proposed current mirror are very low input voltage requirement (a few mV), low output voltage requirement, high output impedance and simple circuitry. The core structure of the proposed RBCM consists of three transistors (excluding bias circuitry) and two low value grounded resistors. The proposed circuit alleviates the need for cascode structures which are conventionally used to boost the output impedance and linearity. SPICE simulations using 0.18[Formula: see text][Formula: see text]m CMOS technology parameters under supply voltage of 0.9[Formula: see text]V are reported which show input and output voltage requirements of 40[Formula: see text]mV and 0.1[Formula: see text]V respectively, low THD of 1.2%, [Formula: see text] of 496[Formula: see text][Formula: see text], [Formula: see text] of 1[Formula: see text]M[Formula: see text], [Formula: see text]3[Formula: see text]dB bandwidth of 181[Formula: see text]MHz and power dissipation of 154[Formula: see text][Formula: see text]W. A high CMRR differential amplifier and a high performance current difference circuit as applications of the proposed RBCM are given. The proposed RBCM is very useful in tackling restrictions of modern technologies such as reduced supply voltage and transistors low intrinsic output impedance.

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