Design and simulation of wide band input matching circuit for RF power transistor in VHF range

Author(s):  
Hamid Mubarak ◽  
Mustafa Makkawi
Electronics ◽  
2021 ◽  
Vol 10 (7) ◽  
pp. 780
Author(s):  
Matteo D’Addato ◽  
Alessia M. Elgani ◽  
Luca Perilli ◽  
Eleonora Franchi Scarselli ◽  
Antonio Gnudi ◽  
...  

This article presents a data-startable baseband logic featuring a gated oscillator clock and data recovery (GO-CDR) circuit for nanowatt wake-up and data receivers (WuRxs). At each data transition, the phase misalignment between the data coming from the analog front-end (AFE) and the clock is cleared by the GO-CDR circuit, thus allowing the reception of long data streams. Any free-running frequency mismatch between the GO and the bitrate does not limit the number of receivable bits, but only the maximum number of equal consecutive bits (Nm). To overcome this limitation, the proposed system includes a frequency calibration circuit, which reduces the frequency mismatch to ±0.5%, thus enabling the WuRx to be used with different encoding techniques up to Nm = 100. A full WuRx prototype, including an always-on clockless AFE operating in subthreshold, was fabricated with STMicroelectronics 90 nm BCD technology. The WuRx is supplied with 0.6 V, and the power consumption, excluding the calibration circuit, is 12.8 nW during the rest state and 17 nW at a 1 kbps data rate. With a 1 kbps On-Off Keying (OOK) modulated input and −35 dBm of input RF power after the input matching network (IMN), a 10−3 missed detection rate with a 0 bit error tolerance is measured, transmitting 63 bit packets with the Nm ranging from 1 to 63. The total sensitivity, including the estimated IMN gain at 100 MHz and 433 MHz, is −59.8 dBm and −52.3 dBm, respectively. In comparison with an ideal CDR, the degradation of the sensitivity due to the GO-CDR is 1.25 dBm. False alarm rate measurements lasting 24 h revealed zero overall false wake-ups.


2013 ◽  
Vol 479-480 ◽  
pp. 1014-1017
Author(s):  
Yi Cheng Chang ◽  
Meng Ting Hsu ◽  
Yu Chang Hsieh

In this study, three stage ultra-wide-band CMOS low-noise amplifier (LNA) is presented. The UWB LNA is design in 0.18μm TSMC CMOS technique. The LNA input and output return loss are both less than-10dB, and achieved 10dB of average power gain, the minimum noise figure is 6.55dB, IIP3 is about-9.5dBm. It consumes 11mW from a 1.0-V supply voltage.


2022 ◽  
Author(s):  
siddik yarman

selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/ delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely “Cree CG2H40045”, over 0.8 -3.8 GHz bandwidth.


Linearly efficient RF power amplifiers have a tremendous role in wireless communication and radar systems as they lie at the front end of most RF systems. In today’s world of wireless communication, it is not an easy task to design a RF power amplifier that is linearly efficient. There are two main key challenges that one face for making RF power amplifier’s behavior linearly efficient. First is to characterize RF power amplifier’s coefficients smartly. Second is to propose an approach that works on input signal and make its behavior inverse to that of the designed amplifier behavior so that overall response of the system becomes linear. For countering first challenge, most advanced universally accepted algorithms like Memory Polynomial, Generalized Hammerstein, Cross-term Memory Polynomial and Cross-term Hammerstein are implemented to design RF power amplifier models. For countering second challenge, latest DPD algorithms are implemented which make net response of a system linear. The memory models for modelling RF power amplifier are categorized for narrowband and wideband applications. The narrowband power amplifier models include Memory Polynomial and Cross-term Memory Polynomial models whereas wideband power amplifier models include Generalized Hammerstein and Cross-term Hammerstein models. In this paper, various performance indicators like Standard Deviation (SD), Third Order Intercept (TOI), Intermodulation Distortion Products (IMD3), Modulation Error Ratio (MER), Spurious Free Dynamic Range (SFDR) and Error Vector Magnitude (EVM) are used to characterize RF power amplifier for both narrow and wide band applications. The simulation results show that under narrowband applications, Cross-term Memory Polynomial model works best as it has least standard deviation and is also satisfying other performance parameters up to appreciable level with and without DPD algorithm implementation. While for wideband applications, Cross-term Hammerstein model satisfies the performance measuring parameters excellently.


Author(s):  
Tamotsu Hashizume ◽  
Ryota Ochi ◽  
Erika Maeda ◽  
Toshihide Nabatame ◽  
Koji Shiozaki ◽  
...  
Keyword(s):  
Rf Power ◽  

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