An Equivalent-Circuit Model of Planar GaAs Schottky Diode for Terahertz Application

2018 ◽  
Author(s):  
Sensong Shen ◽  
Mengxia Yu ◽  
Senlin Zhang ◽  
Xiangou Zhang ◽  
Jun Xu
Keyword(s):  
Equivalent Circuit ◽  
Schottky Diode ◽  
Equivalent Circuit Model ◽  
Circuit Model

Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE

2007 ◽  
Vol 7 (11) ◽  
pp. 4089-4093
Author(s):  
Sehan Lee ◽  
Yunseop Yu ◽  
Sungwoo Hwang ◽  
Doyeol Ahn
Keyword(s):  
Equivalent Circuit ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Equivalent Circuit Model ◽  
Thermionic Emission ◽  
Metal Structure ◽  
Circuit Model ◽  
Semiconductor Nanowire ◽  
Circuit Simulator ◽  
Thermionic Field Emission

An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.

Equivalent Circuit Model of Semiconductor Nanowire Diode by SPICE

2007 ◽  
Vol 7 (11) ◽  
pp. 4089-4093 ◽  
Author(s):  
Sehan Lee ◽  
Yunseop Yu ◽  
Sungwoo Hwang ◽  
Doyeol Ahn
Keyword(s):  
Equivalent Circuit ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Equivalent Circuit Model ◽  
Thermionic Emission ◽  
Metal Structure ◽  
Circuit Model ◽  
Semiconductor Nanowire ◽  
Circuit Simulator ◽  
Thermionic Field Emission

An equivalent circuit model of nanowire diodes is introduced. Because nanowire diodes inevitably involve a metal-semiconductor-metal structure, they consist of two metal-semiconductor contacts and one resistor in between these contacts. Our equivalent circuit consists of two Schottky diodes and one resistor. The current through the reverse-biased Schottky diode is calculated from the thermionic field emission (TFE) theory and that of the forward-biased Schottky diode is obtained from the classical thermionic emission (TE) equation. Our model is integrated into the conventional circuit simulator SPICE by a sub-circuit with TFE and TE routines. The results simulated with our model by SPICE are in good agreement with various, previously reported experimental results.

Modeling of a millimeter wave planar Schottky diode using both improved equivalent circuit model and 3D-EM model

Optik ◽  
2014 ◽  
Vol 125 (13) ◽  
pp. 3324-3327 ◽  
Author(s):  
Li Li ◽  
Yong Zhang ◽  
Wei Zhao ◽  
Shuang Liu ◽  
Ruimin Xu
Keyword(s):  
Equivalent Circuit ◽  
Millimeter Wave ◽  
Schottky Diode ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
3D Em

An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

2012 ◽  
Vol 132 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Satoshi Maruyama ◽  
Muneki Nakada ◽  
Makoto Mita ◽  
Takuya Takahashi ◽  
Hiroyuki Fujita ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Pulse Width ◽  
Pulse Width Modulation ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Comb Drive ◽  
Optical Scanner

scholarly journals A Novel, Improved Equivalent Circuit Model for Double-Sided Linear Induction Motor

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1644
Author(s):  
Qian Zhang ◽  
Huijuan Liu ◽  
Tengfei Song ◽  
Zhenyang Zhang
Keyword(s):  
Finite Element ◽  
Finite Element Model ◽  
Equivalent Circuit ◽  
Skin Effect ◽  
Equivalent Circuit Model ◽  
Element Model ◽  
Circuit Model ◽  
End Effects ◽  
3D Finite Element ◽  
Linear Induction

A novel, improved equivalent circuit model of double-sided linear induction motors (DLIMs) is proposed, which takes the skin effect and the nonzero leakage reactance of the secondary, longitudinal, and transverse end effects into consideration. Firstly, the traditional equivalent circuit with longitudinal and transverse end effects are briefly reviewed. Additionally, the correction coefficients for longitudinal and transverse end effects derived by one-dimensional analysis models are given. Secondly, correction factors for skin effect, which reflects the inhomogeneous air gap magnetic field vertically, and the secondary leakage reactance are derived by the quasi-two-dimensional analysis model. Then, the proposed equivalent circuit is presented, and the excitation reactance and secondary resistance are modified by the correction coefficients derived from the three analytical models. Finally, a three-dimensional (3D) finite element model is used to verify the proposed equivalent circuit model under varying air gap width and frequency, and the results are also compared with that of the traditional equivalent circuit models. The calculated thrust characteristics by the proposed equivalent circuit and 3D finite element model are experimentally validated under a constant voltage–frequency drive.

Mesh Dependency on a Partial Element Equivalent Circuit Model for an NI HTS Coil

2021 ◽  
Vol 31 (5) ◽  
pp. 1-5
Author(s):  
Chaemin Im ◽  
Geonyoung Kim ◽  
Jeseok Bang ◽  
Kibum Choi ◽  
Soobin An ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Mesh Dependency ◽  
Partial Element Equivalent Circuit ◽  
Partial Element
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