Electrical conductivity of ceramics of SiC-AlN, SiC-BeO, Al/sub 2/O/sub 3/ in the temperature range 300-1800 K

2002 ◽  
Author(s):  
D.D. Avrov ◽  
A.S. Bakin ◽  
S.I. Dorozhkin ◽  
V.P. Rastegaev ◽  
Yu.M. Tairov ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Temperature Range

scholarly journals Preparation and Thermoelectric Properties of Graphite/poly(3,4-ethyenedioxythiophene) Nanocomposites

Energies ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 2849 ◽  
Author(s):  
Yong Du ◽  
Haixia Li ◽  
Xuechen Jia ◽  
Yunchen Dou ◽  
Jiayue Xu ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Oxidative Polymerization ◽  
Polymerization Process ◽  
Measurement Temperature ◽  
Temperature Range ◽  
Different Content

Graphite/poly(3,4-ethyenedioxythiophene) (PEDOT) nanocomposites were prepared by an in-situ oxidative polymerization process. The electrical conductivity and Seebeck coefficient of the graphite/PEDOT nanocomposites with different content of graphite were measured in the temperature range from 300 K to 380 K. The results show that as the content of graphite increased from 0 to 37.2 wt %, the electrical conductivity of the nanocomposites increased sharply from 3.6 S/cm to 80.1 S/cm, while the Seebeck coefficient kept almost the same value (in the range between 12.0 μV/K to 15.1 μV/K) at 300 K, which lead to an increased power factor. The Seebeck coefficient of the nanocomposites increased from 300 K to 380 K, while the electrical conductivity did not substantially depend on the measurement temperature. As a result, a power factor of 3.2 μWm−1 K−2 at 380 K was obtained for the nanocomposites with 37.2 wt % graphite.

scholarly journals Особенности электрических свойств кристаллов ниобата лития, выращенных из распалава с флюсом K-=SUB=-2-=/SUB=-O

2019 ◽  
Vol 61 (7) ◽  
pp. 1270
Author(s):  
А.В. Яценко ◽  
С.В. Евдокимов ◽  
М.Н. Палатников ◽  
Н.В. Сидоров
Keyword(s):  
Electrical Conductivity ◽  
Lithium Niobate ◽  
Temperature Dependence ◽  
Proton Conductivity ◽  
Pyroelectric Coefficient ◽  
Strong Anisotropy ◽  
Temperature Range ◽  
Lithium Niobate Crystals

The temperature dependence of the electrical conductivity and the primary pyroelectric coefficient of lithium niobate crystals LiNbO3 grown from a melt with K2O flux was investigated in the range of 292–450 K . It is shown that these crystals are characterized by a strong anisotropy of electrical conductivity, and in the temperature range studied, proton conductivity dominates.

scholarly journals Влияние концентрации примеси магния на электрические свойства кристаллов LiNbO-=SUB=-3-=/SUB=-

2021 ◽  
Vol 63 (10) ◽  
pp. 1566
Author(s):  
А.В. Яценко ◽  
С.В. Евдокимов ◽  
В.Ф. Шульгин ◽  
М.Н. Палатников ◽  
Н.В. Сидоров ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Absorption Spectra ◽  
Impurity Content ◽  
Threshold Value ◽  
Ir Absorption ◽  
Temperature Range ◽  
Polar Direction ◽  
Ir Absorption Spectra ◽  
Mg Content

Using the results of studying the electrical conductivity in the temperature range of ~ 295-460 K and the IR absorption spectra of a series of LiNbO3: Mg crystals, it is shown that as the Mg content in the sample increases, the mobility of H+ ions sharply decreases when moving along the polar direction. This effect is most clearly manifested in the samples of LiNbO3: Mg crystals with a high (above threshold value) impurity content.

scholarly journals SYNTHESIS AND ELECTRICAL CONDUCTIVITY OF SOLID SOLUTIONS OF THE SYSTEM RbF-PbF2-SnF2

2019 ◽  
Vol 85 (5) ◽  
pp. 60-68
Author(s):  
Yuliay Pogorenko ◽  
Anatoliy Omel’chuk ◽  
Roman Pshenichny ◽  
Anton Nagornyi
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Solid Solutions ◽  
Basic Structure ◽  
Elementary Cell ◽  
Initial Structure ◽  
Fluoride Ions ◽  
Temperature Range ◽  
Order Of Magnitude

In the system RbF–PbF2–SnF2 are formed solid solutions of the heterovalent substitution RbxPb0,86‑xSn1,14F4-x (0 < x ≤ 0,2) with structure of β–PbSnF4. At x > 0,2 on the X-ray diffractograms, in addition to the basic structure, additional peaks are recorded that do not correspond to the reflexes of the individual fluorides and can indicate the formation of a mixture of solid solutions of different composition. For single-phase solid solutions, the calculated parameters of the crystal lattice are satisfactorily described by the Vegard rule. The introduction of ions of Rb+ into the initial structure leads to an increase in the parameter a of the elementary cell from 5.967 for x = 0 to 5.970 for x = 0.20. The replacement of a part of leads ions to rubium ions an increase in electrical conductivity compared with β–PbSnF4 and Pb0.86Sn1.14F4. Insignificant substitution (up to 3.0 mol%) of ions Pb2+ at Rb+ at T<500 K per order of magnitude reduces the conductivity of the samples obtained, while the nature of its temperature dependence is similar to the temperature dependence of the conductivity of the sample β-PbSnF4. By replacing 5 mol. % of ions with Pb2+ on Rb+, the fluoride ion conductivity at T> 450 K is higher than the conductivity of the initial sample Pb0,86Sn1,14F4 and at temperatures below 450 K by an order of magnitude smaller. With further increase in the content of RbF the electrical conductivity of the samples increases throughout the temperature range, reaching the maximum values at x≥0.15 (σ573 = 0.34–0.41 S/cm, Ea = 0.16 eV and σ373 = (5.34–8.16)•10-2 S/cm, Ea = 0.48–0.51 eV, respectively). In the general case, the replacement of a part of the ions of Pb2+ with Rb+ to an increase in the electrical conductivity of the samples throughout the temperature range. The activation energy of conductivity with an increase in the content of RbF in the low-temperature region in the general case increases, and at temperatures above 400 K is inversely proportional decreasing. The nature of the dependence of the activation energy on the concentration of the heterovalent substituent and its value indicate that the conductivity of the samples obtained increases with an increase in the vacancies of fluoride ions in the structure of the solid solutions.

scholarly journals Effect of band structure adjustment based of Cu site on the thermoelectric properties of BiCuSeO

2021 ◽  
Author(s):  
Bo Feng
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Density Of States ◽  
First Principles Calculation ◽  
Temperature Range ◽  
Ti Doping

Abstract The effect of Ti doped at Cu site on the thermoelectric properties of BiCuSeO was studied by experimental method and first principles calculation. The results show that Ti doping can cause the lattice contraction and decrease the lattice constant. Ti doping can increase the band gap and lengthen the Cu/Ti-Se bond, resulting in the decrease of carrier concentration. Ti doping can reduce the effective mass and the Bi-Se bond length, correspondingly improve the carrier mobility. Ti doping can decrease the density of states of Cu-3d and Se-4p orbitals at the top of valence band, but Ti-4p orbitals can obviously increase the density of states at the top of valence band and finally increase the electrical conductivity in the whole temperature range. With the decrease of effective mass, Ti doping would reduce the Seebeck coefficient, but the gain effect caused by the increase of electrical conductivity is more than the benefit reduction effect caused by the decrease of Seebeck coefficient, and the power factor shows an upward trend. Ti doping can reduce Young's modulus, lead to the increase of defect scattering and strain field, correspondingly reduce the lattice thermal conductivity and total thermal conductivity. It is greatly increased for the ZT values in the middle and high temperature range, with the highest value of 1.04 at 873 K.

Thermoelectric Properties of n-type (Bi2Se3)x(Bi2Te3)1-x Crystals Prepared by Zone Melting

2008 ◽  
Vol 368-372 ◽  
pp. 547-549
Author(s):  
Jun Jiang ◽  
Ya Li Li ◽  
Gao Jie Xu ◽  
Ping Cui ◽  
Li Dong Chen
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Zone Melting ◽  
Chemical Compositions ◽  
Melting Method ◽  
Temperature Range

In the present study, n-type (Bi2Se3)x(Bi2Te3)1-x crystals with various chemical compositions were fabricated by the zone melting method. Thermoelectric properties, including Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ), were measured in the temperature range of 300-500 K. The influence of the variations of Bi2Te3 and Bi2Se3 content on thermoelectric properties was studied. The increase of Bi2Se3 content (x) caused an increase in carrier concentration and thus an increase of σ and a decrease of α. The maximum figure of merit (ZT = α2σT/κ) of 0.87 was obtained at about 325 K for the composition of 93%Bi2Te3-7%Bi2Se3 with doping TeI4.

scholarly journals Anneal hardening effect in sintered copper alloys

2002 ◽  
Vol 34 (2) ◽  
pp. 169-174 ◽  
Author(s):  
Svetlana Nestorovic ◽  
Boran Milicevic ◽  
Desimir Markovic
Keyword(s):  
Electrical Conductivity ◽  
Cold Rolling ◽  
Copper Alloys ◽  
Recrystallization Temperature ◽  
Temperature Range ◽  
Hardening Effect ◽  
Sintered Copper ◽  
Anneal Hardening ◽  
Cold Rolled

Samples of copper and copper alloys CuNi and CuNiAl were prepared by a powder metallurgical method and were then subjected to cold rolling with different degrees of deformation. Copper and copper alloys in the cold-rolled state were isochronally annealed up to the recrystallization temperature during which hardness and electrical conductivity were measured. This investigation shows that the anneal hardening effect occurs in a temperature range of 450 - 650 K, followed with an increase in hardness of alloys.

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