Monolithic CMOS/MEMS Spray Chip for Addressing Medical DNA Gene Sequence

Author(s):  
Jian-Chiun Liou ◽  
Wen-De Lin
Keyword(s):  
Author(s):  
Shaima’a Dakhel AbdulHassa

Gairdia lamblia is one of parasites that cause intestinal problems within the human body, particularly private travelers and children. In this study a total of (100) diarrheal patients, 20 patients with Giardiasis were identified by fecal antigen. 9 out of 20(20%) of them were infected by fecal antigen, while 9(9%) of them were infected by using the screening general stool examination (GSE). The stool samples were collected from patient how vested the Medical City/ Baghdad and Tikrit teaching Hospital during the period from 1 st may 2018 to 1 February 2019. The results revealing a significant difference (p andlt; 0.05) between the two methods of detection for G. lamblia (Fecal antigen method and GSE). IT has been shown that out of 20 infected individuals 12(12%) were males and 8(8%) were females, indicating regarding no significant deference in the distribution of Giardiasis among genders. In regard the age, our results showed that highest infection rate 8(3.2%) was recorded in the age group (10-19) years, followed by the age group (20-2) years which was 692.4%). In this study five mutations were recorded at position (926, 1094, 1202and 1304), by using tpiA gene sequence method, and tpiB gene was on point mutation change (G254A), in the position (85) of triose phosphate isomease.


2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.


2021 ◽  
pp. 1-1
Author(s):  
Pramod Martha ◽  
Naveen Kadayinti ◽  
V. Seena
Keyword(s):  

Chemoecology ◽  
2011 ◽  
Vol 22 (1) ◽  
pp. 23-28 ◽  
Author(s):  
József Vuts ◽  
Till Tolasch ◽  
Lorenzo Furlan ◽  
Éva Bálintné Csonka ◽  
Tamás Felföldi ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document