A Vt independent voltage reference based on composite transistors operating in weak inversion

2011 ◽  
Author(s):  
P. C. Crepaldi ◽  
L. H. de C. Ferreira ◽  
R. L. Moreno ◽  
L. B. Zoccal ◽  
T. C. Pimenta
Keyword(s):  
Voltage Reference ◽  
Weak Inversion

scholarly journals A curvature-corrected CMOS bandgap reference

2005 ◽  
Vol 1 ◽  
pp. 181-184
Author(s):  
O. Mitrea ◽  
C. Popa ◽  
A. M. Manolescu ◽  
M. Glesner
Keyword(s):  
Power Consumption ◽  
Cmos Technology ◽  
Measured Temperature ◽  
Bandgap Reference ◽  
Voltage Reference ◽  
Weak Inversion ◽  
Chip Area ◽  
Curvature Correction ◽  
Small Correction ◽  
Correction Technique

Abstract. This paper presents a CMOS bandgap reference that employs a curvature correction technique for compensating the nonlinear voltage temperature dependence of a diode connected BJT. The proposed circuit cancels the first and the second order terms in the VBE(T ) expansion by using the current of an autopolarizedWidlar source and a small correction current generated by a MOSFET biased in weak inversion. The voltage reference has been fabricated in a 0.35µm 3Metal/2Poly CMOS technology and the chip area is approximately 70µm × 110µm. The measured temperature coefficient is about 10.5 ppm/K over a temperature range of 10– 90°C while the power consumption is less than 1.4mW.

LOGARITHMICAL CURVATURE-CORRECTED VOLTAGE REFERENCES WITH IMPROVED TEMPERATURE BEHAVIOR

2009 ◽  
Vol 18 (03) ◽  
pp. 519-534 ◽  
Author(s):  
COSMIN POPA
Keyword(s):  
Supply Voltage ◽  
Cmos Technology ◽  
Reference Voltage ◽  
Voltage Reference ◽  
Mos Transistors ◽  
Weak Inversion ◽  
Mos Transistor ◽  
Curvature Correction ◽  
Current Consumption ◽  
Correction Technique

Two voltage reference circuits will be presented. For the first circuit, the linear compensation of V GS (T) for an MOS transistor in subthreshold region will be realized using an original offset voltage follower block as PTAT voltage generator, with the advantages of reducing the silicon area and of increasing accuracy by replacing matched resistors with matched transistors. A new logarithmic curvature-correction technique will be implemented using an asymmetric differential amplifier for compensating the logarithmic temperature dependent term from V GS (T). Because of the operation in weak inversion of all MOS transistors, the circuit will have a very small current consumption, making it compatible with low-power low-voltage designs. The simulated temperature coefficient of the reference voltage for V DD = 2.5 V and a temperature range 0 < t < 30° C is 36.5 ppm/K, confirming the theoretical estimations. The variation of the reference voltage with respect to the supply voltage is 1.5 mV/V for 2–4 V. The circuit current consumption is about 1 μA and the minimal supply voltage is 2 V. The main goal of the second proposed voltage reference is to improve the temperature behavior of a previous reported bipolar voltage reference, by replacing the bipolar transistors with MOS transistors working in weak inversion, with the advantage of obtaining the compatibility with CMOS technology. The new proposed curvature-correction technique will be based on the compensation of the nonlinear temperature dependence of the gate-source voltage for a subthreshold operated MOS transistor by a correction current obtained by taking the difference between two gate-source voltages for MOS transistors biased at drain currents with different temperature dependencies. The circuit is implemented in 0.35 μm CMOS technology. The SPICE simulation confirms the theoretical estimated results, reporting a temperature coefficient of 4.23 ppm/K for the commercial temperature range, 0 < t < 70° C and a small supply voltage, V DD = 2.5 V . The variation of the reference voltage with respect to the supply voltage is 0.9 mV/V for 2–4 V.

A High PSRR Bandgap Voltage Reference with Virtually Diode-Connected MOS Transistors

2010 ◽  
Vol E93-C (12) ◽  
pp. 1708-1712 ◽  
Author(s):  
Kianoush SOURI ◽  
Hossein SHAMSI ◽  
Mehrshad KAZEMI ◽  
Kamran SOURI
Keyword(s):  
Voltage Reference ◽  
Mos Transistors ◽  
Bandgap Voltage Reference

Identificación de polaridad de los devanados en un motor trifásico de 6 terminales

2019 ◽  
pp. 13-19
Author(s):  
José Luis Viramontes-Reyna ◽  
Josafat Moreno-Silva ◽  
José Guadalupe Montelongo-Sierra ◽  
Erasmo Velazquez-Leyva
Keyword(s):  
Low Cost ◽  
Voltage Reference ◽  
Three Phase ◽  
Voltage Phase ◽  
The Law ◽  
And Control

This document presents the results obtained from the application of the law of Lens to correctly identify the polarity of the windings in a three-phase motor with 6 exposed terminals, when the corresponding labeling is not in any situation; Prior to identifying the polarity, it should be considered to have the pairs of the three windings located. For the polarity, it is proposed to feed with a voltage of 12 Vrms to one of the windings, which are identified randomly as W1 and W2, where W1 is connected to the voltage phase of 12 Vrms of the signal and W2 to the voltage reference to 0V; by means of voltage induction and considering the law of Lens, the remaining 4 terminals can be identified and labeled as V1, V2, U1 and U2. For this process a microcontroller and control elements with low cost are used.

Battery Losses In a MMC for BEVS Application

2018 ◽  
Vol 12 (1) ◽  
pp. 98-109 ◽  
Author(s):  
Adolfo Dannier ◽  
Gianluca Brando ◽  
Ivan Spina ◽  
Diego Iannuzzi
Keyword(s):  
Mathematical Model ◽  
System Architecture ◽  
Electrochemical Cell ◽  
Voltage Source ◽  
Modular Multilevel Converter ◽  
Voltage Reference ◽  
Sinusoidal Voltage ◽  
Current Waveform ◽  
Voltage Source Inverter ◽  
Multilevel Converter

Objective:This paper analyses the Modular Multilevel Converter (MMC) topology, where each individual Sub Module (SM), in half bridge configuration, is directly fed by an elementary electrochemical cell.Methods:The aim is to investigate how the reference voltages influence the cells currents waveforms, determining how the active powers and the losses are distributed among the cells. Considering a 2-level Voltage Source Inverter (VSI) topology working in the same conditions, the ratio between the MMC total cells losses and VSI total cells losses is calculated. After showing the system architecture and mathematical model, the cells current waveform investigation is presented and detailed both for triangular and sinusoidal voltage reference waveform.Results:Finally, the results are critically discussed with particular focus on the comparison between the MMC and the VSI topologies.

scholarly journals Continuous Control Set Predictive Current Control for Induction Machine

2021 ◽  
Vol 11 (13) ◽  
pp. 6230
Author(s):  
Toni Varga ◽  
Tin Benšić ◽  
Vedrana Jerković Štil ◽  
Marinko Barukčić
Keyword(s):  
Control Method ◽  
Induction Machine ◽  
Current Control ◽  
Continuous Control ◽  
Loop Model ◽  
Voltage Reference ◽  
Control Loop ◽  
Speed Tracking ◽  
Finite Control ◽  
Control Set

A speed tracking control method for induction machine is shown in this paper. The method consists of outer speed control loop and inner current control loop. Model predictive current control method without the need for calculation of the weighing factors is utilized for the inner control loop, which generates a continuous set of voltage reference values that can be modulated and applied by the inverter to the induction machine. Interesting parallels are drawn between the developed method and state feedback principles that helped with the analysis of the stability and controllability. Simple speed and rotor flux estimator is implemented that helps achieve sensorless control. Simulation is conducted and the method shows great performance for speed tracking in a steady state, and during transients as well. Additionally, compared to the finite control set predictive current control, it shows less harmonic content in the generated torque on the rotor shaft.

A 2.1 ppm/°C, 0.55-2.4 V, 5.6 nW, 235 mV, CMOS-only subthreshold voltage reference

2021 ◽  
pp. 105060
Author(s):  
Quanzhen Duan ◽  
Chenxi Lin ◽  
Peiju Liu ◽  
S. Huang ◽  
Zhen Meng
Keyword(s):  
Voltage Reference ◽  
Subthreshold Voltage

scholarly journals Starter for Voltage Boost Converter to Harvest Thermoelectric Energy for Body-Worn Sensors

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4092
Author(s):  
Grzegorz Blakiewicz ◽  
Jacek Jakusz ◽  
Waldemar Jendernalik
Keyword(s):  
Threshold Voltage ◽  
Low Voltage ◽  
Boost Converter ◽  
Mos Transistors ◽  
Weak Inversion ◽  
Thermoelectric Energy ◽  
On Chip ◽  
Voltage Swing ◽  
High Output Voltage ◽  
High Output

This paper examines the suitability of selected configurations of ultra-low voltage (ULV) oscillators as starters for a voltage boost converter to harvest energy from a thermoelectric generator (TEG). Important properties of particularly promising configurations, suitable for on-chip implementation are compared. On this basis, an improved oscillator with a low startup voltage and a high output voltage swing is proposed. The applicability of n-channel native MOS transistors with negative or near-zero threshold voltage in ULV oscillators is analyzed. The results demonstrate that a near-zero threshold voltage transistor operating in the weak inversion region is most advantageous for the considered application. The obtained results were used as a reference for design of a boost converter starter intended for integration in 180-nm CMOS X-FAB technology. In the selected technology, the most suitable transistor available with a negative threshold voltage was used. Despite using a transistor with a negative threshold voltage, a low startup voltage of 29 mV, a power consumption of 70 µW, and power conversion efficiency of about 1.5% were achieved. A great advantage of the proposed starter is that it eliminates a multistage charge pump necessary to obtain a voltage of sufficient value to supply the boost converter control circuit.

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