Linearity Measurements of Si/SiGe:C Heterojunction Bipolar Transistor using a Large Signal Network Analyzer associated with an active Load-Pull Setup

2006 ◽  
Author(s):  
Floria Blanchet ◽  
Mohammed Yaagoubi ◽  
Denis Barataud ◽  
Jean-michel Nebus ◽  
Denis Pache ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Network Analyzer ◽  
Large Signal ◽  
Active Load ◽  
Load Pull ◽  
Signal Network

scholarly journals Wideband Active Load–Pull by Device Output Match Compensation Using a Vector Network Analyzer

2021 ◽  
Vol 69 (1) ◽  
pp. 874-886
Author(s):  
Alberto Maria Angelotti ◽  
Gian Piero Gibiino ◽  
Troels S. Nielsen ◽  
Dominique Schreurs ◽  
Alberto Santarelli
Keyword(s):  
Vector Network Analyzer ◽  
Network Analyzer ◽  
Active Load ◽  
Load Pull

Development of a Large-Signal-Network-Analyzer Round-Robin Artifact

2013 ◽  
Vol 14 (1) ◽  
pp. 140-145 ◽  
Author(s):  
S. Adhikari ◽  
A. Ghiotto ◽  
Kuangda Wang ◽  
Ke Wu
Keyword(s):  
Round Robin ◽  
Network Analyzer ◽  
Large Signal ◽  
Signal Network

Combined Wideband Active Load-Pull and Modulation Distortion Characterization with a Vector Network Analyzer

2021 ◽  
Author(s):  
Alberto M. Angelotti ◽  
Gian Piero Gibiino ◽  
Alberto Santarelli ◽  
Troels S. Nielsen ◽  
Jan Verspecht
Keyword(s):  
Vector Network Analyzer ◽  
Network Analyzer ◽  
Active Load ◽  
Load Pull

Large signal device characterisation using active load-pull for improved MMIC design

2008 ◽  
Author(s):  
D.M. FitzPatrick ◽  
T. Williams ◽  
J. Lees ◽  
J. Benedikt ◽  
P.J. Tasker
Keyword(s):  
Large Signal ◽  
Active Load ◽  
Load Pull

Large Signal Model of Heterojunction Bipolar Transistor InP/InGaAs as an Optoelectronic Mixer

2015 ◽  
Vol 67 (3) ◽  
Author(s):  
N. A. Shaharuddin ◽  
S. M. Idrus ◽  
S. Isaak ◽  
N. A. Mohamed ◽  
N. A. A. Yusni
Keyword(s):  
Radio Over Fiber ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Large Signal ◽  
Signal Model ◽  
Conversion Frequency ◽  
Broadband Radio ◽  
Spectral Performance

A large-signal model of InP/InGaAs single Heterojunction Bipolar Transistor (HBT) has been developed considering spectral performance and mixing. This model is based on Gummel Poon BJT model. HBT InP/InGaAs has been modeled and analyzed in this paper as an optoelectronic mixer (OEM). The HBT proposed was simulated by considering the wavelength of 1310 nm for an up-conversion frequency of 30 GHz. Its characteristics was further investigated to develop the appropriate structure device for OEM application. This proposed HBT InP/InGaAs can be potentially implemented in the broadband Radio over Fiber (RoF) system to perform photodetection and frequency up-conversion.

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