Microwave Tunable Device based on Thin Ferroelectric Film

2002 ◽  
Author(s):  
Saeed Abadei
Keyword(s):  
Ferroelectric Film ◽  
Thin Ferroelectric Film ◽  
Tunable Device

Nonlinear properties of thin ferroelectric film-based capacitors at elevated microwave power

2006 ◽  
Vol 89 (23) ◽  
pp. 232901 ◽  
Author(s):  
Oleg Soldatenkov ◽  
Tatyana Samoilova ◽  
Andrey Ivanov ◽  
Andrey Kozyrev ◽  
David Ginley ◽  
...  
Keyword(s):  
Microwave Power ◽  
Ferroelectric Film ◽  
Nonlinear Properties ◽  
Thin Ferroelectric Film

The Influence of Mismatch-Induced Field on Thin Ferroelectric Film Size Effects

2004 ◽  
Vol 64 (1) ◽  
pp. 17-38 ◽  
Author(s):  
M. D. GLINCHUK ◽  
A. N. MOROZOVSKA ◽  
E. A. ELISEEV
Keyword(s):  
Size Effects ◽  
Ferroelectric Film ◽  
Thin Ferroelectric Film ◽  
Induced Field

Effect of electrodes on the properties of a thin ferroelectric film

2008 ◽  
Vol 50 (3) ◽  
pp. 472-477 ◽  
Author(s):  
M. D. Glinchuk ◽  
V. Ya. Zaulychny ◽  
V. A. Stephanovich
Keyword(s):  
Ferroelectric Film ◽  
Thin Ferroelectric Film

scholarly journals Ferroelectric Instability and Dimensionality in Bi-Layered Perovskites and Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-10 ◽  
Author(s):  
Akira Onodera ◽  
Masanori Fukunaga ◽  
Masaki Takesada
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Lattice Strain ◽  
Ferroelectric Phase ◽  
Ferroelectric Film ◽  
Dimensional Structure ◽  
Layered Perovskite ◽  
Thin Ferroelectric Film ◽  
Layered Perovskites

The dielectric and thermal properties of Bi (bismuth)-layered perovskite SrBi2Ta2O9(SBT) are discussed in comparison with ferroelectric thin BaTiO3films. Although these two perovskites exhibit quite a different nature, the dielectric properties of BaTiO3thin film are similar to those in bulk SBT. The dielectric properties and pseudo-two-dimensional structure between SBT and thin film suggest that the bulk layered ferroelectric SBT is a good model of ultra-thin ferroelectric film with two perovskite layers, free from any misfit lattice strain with substrate and surface charge at the interface with electrodes. Based on the mechanism of ferroelectric phase transition of SBT, it seems plausible that the ferroelectric interaction is still prominent but shows a crossover from ferroelectric to antiferroelectric interaction in perovskite ultra-thin films along the tetragonal axis.

scholarly journals Tunable Zeroth-Order Resonator Based on Ferroelectric Materials

2021 ◽  
Author(s):  
Mohamed M. Mansour ◽  
Haruichi Kanaya
Keyword(s):  
Thin Film ◽  
Microelectromechanical Systems ◽  
Dynamic Range ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Materials ◽  
Ferroelectric Film ◽  
Zeroth Order ◽  
Microwave Components ◽  
Full Wave Analysis ◽  
Tunable Device

Tunable microwave devices have the benefits of added functionality, smaller form factor, lower cost, and lightweight, and are in great demand for future communications and radar applications as they can extend the operation over a wide dynamic range. Current tunable technologies include several schemes such as ferrites, semiconductors, microelectromechanical systems (MEMS), and ferroelectric thin films. While each technology has its own pros and cons, ferroelectric thin film-based technology has proved itself as the potential candidate for tunable devices due to its simple processes, low power consumption, high power handling, small size, and fast tuning. A tunable Composite Right Left-Handed Zeroth Order Resonator (CRLH ZOR) is introduced in this chapter and it relies mainly on the latest advancement in the ferroelectric materials. It is common that for achieving optimum performance for the resonant structure, this involves the incorporation of an additional tuning by either mechanical means (i.e. with tuning screws) or other coupling mechanisms. The integration between electronic tuning and High-Temperature Superconducting (HTS) components yields a high system performance without degradation of efficiency. This leads not only low-loss microwave components that could be fine-tuned for maximum efficiency but will provide a tunable device over a broadband frequency spectrum as well. The dielectric properties of the ferroelectric thin film, and the thickness of the ferroelectric film, play a fundamental role in the frequency or phase tunability and the overall insertion loss of the circuit. The key advantages of using ferroelectric are the potential for significant size-reduction of the microwave components and systems and the cabibility for integration with microelectronic circuits due to the utilization of thin and thick ferroelectric film technology. In this chapter, ZOR is discussed and the conceptual operation is introduced. The ZOR is designed and simulated by the full-wave analysis software. The response is studied using electromagnetic characteristics with the applied electric field, ferroelectric thickness, and the operating temperature.

Response Time of Sandwich Varactors Containing Thin Ferroelectric Film

Frequenz ◽  
2005 ◽  
Vol 59 (1-2) ◽  
Author(s):  
Andrey Ivanov ◽  
Oleg Soldatenkov ◽  
Andrey Tumarkin ◽  
Alexander Gagarin ◽  
Andrey Kozyrev
Keyword(s):  
Response Time ◽  
Ferroelectric Film ◽  
Thin Ferroelectric Film
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