High Performance Optical Receiver Using a PIN Photodiode and Amplifier for Operation in the Millimeter-wave Region

2000 ◽  
Author(s):  
L. Gomez-Rojas ◽  
N.J. Gomes ◽  
X. Wang ◽  
P.A. Davies ◽  
D. Wake
Keyword(s):  
Millimeter Wave ◽  
High Performance ◽  
Optical Receiver ◽  
Pin Photodiode ◽  
Wave Region

scholarly journals A RF Redundant TSV Interconnection for High Resistance Si Interposer

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 169
Author(s):  
Mengcheng Wang ◽  
Shenglin Ma ◽  
Yufeng Jin ◽  
Wei Wang ◽  
Jing Chen ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Frequency ◽  
High Performance ◽  
Rapid Development ◽  
Coplanar Waveguide ◽  
Equivalent Circuit Model ◽  
High Resistivity ◽  
Performance Requirements ◽  
Wave Radar ◽  
Interconnect Design

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

A Contribution to the Microwave Double Resonance Technique and Measurements of Collision Induced Transitions

1979 ◽  
Vol 34 (5) ◽  
pp. 571-574 ◽  
Author(s):  
H. Dreizier ◽  
W. Schrepp ◽  
R. Schwarz
Keyword(s):  
Millimeter Wave ◽  
Double Resonance ◽  
Absorption Cell ◽  
Resonance Technique ◽  
Wave Region

Abstract A construction for a versatile absorption cell is presented, which may be used for a large variety of double resonance experiments in the radiofrequency, microwave and millimeter wave region. Some measurements of collision induced transitions are reported.

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