Assessment of the Impact of Biaxial Strain on the Drain Current of Decanometric n-MOSFET

2006 ◽  
Author(s):  
D. Ponton ◽  
L. Lucci ◽  
P. Palestri ◽  
D. Esseni ◽  
L. Selmi
Keyword(s):  
Drain Current ◽  
Biaxial Strain ◽  
The Impact

Impact of interface trap charges on Junctionless double and triple metal gate High-k Gate All Around Nanowire FET based Alzheimer Biosensor

2021 ◽  
Author(s):  
Rishu Chaujar ◽  
Mekonnen Getnet Yirak
Keyword(s):  
Threshold Voltage ◽  
Positive Impact ◽  
Drain Current ◽  
Interface Trap ◽  
Metal Gate ◽  
High K ◽  
Current Threshold ◽  
Subthreshold Voltage ◽  
Output Characteristics ◽  
The Impact

Abstract In this work, junctionless double and triple metal gate high-k gate all around nanowire field-effect transistor-based APTES biosensor has been developed to study the impact of ITCs on device sensitivity. The analytical results were authenticated using ‘‘ATLAS-3D’’ device simulation tool. Effect of different interface trap charge on the output characteristics of double and triple metal gate high-k gate all around junctionless NWFET biosensor was studied. Output characteristics, like transconductance, output conductance,drain current, threshold voltage, subthreshold voltage and switching ratio, including APTES biomolecule, have been studied in both devices. 184% improvement has been investigated in shifting threshold voltage in a triple metal gate compared to a double metal gate when APTES biomolecule immobilizes on the nanogap cavity region under negative ITCs. Based on this finding, drain off-current ratio and shifting threshold voltage were considered as sensing metrics when APTES biomolecule immobilizes in the nanogap cavity under negative ITCs which is significant for Alzheimer's disease detection. We signifies a negative ITC has a positive impact on our proposed biosensor device compared to positive and neutral ITCs.

Enhancement and Modeling of Drain Current in Negative Capacitance Double Gate TFET

2021 ◽  
Author(s):  
SHIKHA U S ◽  
Rekha K James ◽  
Jobymol Jacob ◽  
Anju Pradeep
Keyword(s):  
Drain Current ◽  
Gate Oxide ◽  
Negative Capacitance ◽  
Double Gate ◽  
High K ◽  
Gate Control ◽  
Effect Transistor ◽  
Dimensional Simulation ◽  
The Impact ◽  
Low K

Abstract The drain current improvement in a Negative Capacitance Double Gate Tunnel Field Effect Transistor (NC-DG TFET) with the help of Heterojunction (HJ) at the source-channel region is proposed and modeled in this paper. The gate oxide of the proposed TFET is a stacked configuration of high-k over low-k to improve the gate control without any lattice mismatches. Tangent Line Approximation (TLA) method is used here to model the drain current accurately. The model is validated by incorporating two dimensional simulation of DG-HJ TFET with one dimensional Landau-Khalatnikov (LK) equation. The model matches excellently with the device simulation results. The impact of stacked gate oxide topology is also studied in this paper by comparing the characteristics with unstacked gate oxide. Voltage amplification factor (Av), which is an important parameter in NC devices is also analyzed.

scholarly journals Effect of lateral Gate Design on the Performance of Junctionless Lateral Gate Transistors

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 538
Author(s):  
Farhad Larki ◽  
Md Shabiul Islam ◽  
Arash Dehzangi ◽  
Mohammad Tariqul Islam ◽  
Hin Yong Wong
Keyword(s):  
Computer Aided Design ◽  
Three Dimensional ◽  
Drain Current ◽  
Channel Length ◽  
Influential Factors ◽  
Gate Length ◽  
Current Characteristics ◽  
Lateral Gate ◽  
The Impact ◽  
Gate Design

In this paper, we investigate the effect of lateral gate design on performance of a p-type double lateral gate junctionless transistors (DGJLTs) with an air gate gap. The impact of lateral gate length, which modifies the real channel length of the device and gate gap variation down to 50 nm which have been found to be the most influential factors in the performance of the device have been comprehensively investigated. The characteristics are demonstrated and compared with a nominal DGJLTs through three-dimensional technology computer-aided design (TCAD) simulation. At constant channel geometry (thickness and width), when the lateral gate length decreases, the results show constant flatband drain current characteristics while the OFF state current (IOFF) increases significantly. On the other hand, by decreasing the air gap the subthreshold current considerably decreases while the flatband current is constant. Moreover, at a certain gate gap, the gates lose control over the channel and the device simply works as a resistor. Electric field component, carriers’ density, band edge energies, and recombination rate of the carriers inside the channel in depletion and accumulation regimes are analysed to interpret the variation of output characteristics.

Linearity Analysis of GME-TRC MOSFET Using SiO2 as a Gate Insulator at High Temperature

2013 ◽  
Vol 685 ◽  
pp. 207-210
Author(s):  
Priyanka Malik ◽  
R.S. Gupta ◽  
Mridula Gupta
Keyword(s):  
Drain Current ◽  
Paper Analysis ◽  
Performance Comparison ◽  
Gate Insulator ◽  
Third Order ◽  
Temperature Variations ◽  
Analog Performance ◽  
Recessed Channel ◽  
Bias Point ◽  
The Impact

This paper analysis the impact of temperature variation on gate material engineered trapezoidal recessed channel (GME-TRC) MOSFET and trapezoidal recessed channel (TRC) MOSFET, using ATLAS: 3D device simulator [. The study focuses on the linearity and analog performance comparison of GME-TRC and TRC MOSFETs and the impact of temperature variations on some of the key parameters like drain current, transconductance and the optimum bias point in terms of gm3 (third order derivative of Ids-Vgs) and VIP3 has been analysed.

Drain Current Model for Hetero-Dielectric Based TFET Architectures: Accumulation to Inversion Mode Analysis

2015 ◽  
Vol 36 ◽  
pp. 31-43
Author(s):  
Upasana ◽  
Rakhi Narang ◽  
Manoj Saxena ◽  
Mridula Gupta
Keyword(s):  
Dielectric Material ◽  
Current Model ◽  
Dynamic Performance ◽  
Drain Current ◽  
Dielectric Materials ◽  
Mode Analysis ◽  
Length Variation ◽  
Inversion Mode ◽  
Depth Study ◽  
The Impact

The paper presents an in-depth study of device physics and development of a generalized model (Accumulation-Depletion-Inversion Mode) for Hetero-Dielectric based TFET Architecture. A comparative study among single dielectric (high-k and low-k dielectric materials) and dual-dielectric (Hetero-Dielectric) based p-i-n and p-n-i-n TFET architectures has also been made. The model includes the impact of dielectric length variation and mobile charge carriers which has been validated through the Vgs and Vds dependent effective potential at the channel center of the device. Several physics based parameters such as surface potential, energy band profile, total electric field and drain current (both Ids-Vds and Ids-Vds) have also been investigated. Further, the model has been extended to optimize the Hetero-Dielectric p-n-i-n TFET by tuning the gate work function and length of the dielectric material. While optimization various static parameters such as Subthreshold Swing (SS), threshold voltage, Ion/Ioff ratio and dynamic performance parameters (parasitic capacitances) i.e. total gate capacitance (Cgg), gate to source capacitance (Cgs) and gate to drain capacitance (Cgd) have been investigated. The efficacy of the model has been validated through simulation results obtained using ATLAS device simulator.

scholarly journals Study of Analog/Rf and Stability Investigation of Surrounded Gate Junctionless Graded Channel MOSFET(SJLGC MOSFET)

2021 ◽  
Author(s):  
Sarita Misra ◽  
Sudhansu Mohan Biswal ◽  
Biswajit Baral ◽  
Sanjit Kumar Swain ◽  
Sudhansu Kumar Pati
Keyword(s):  
Drain Current ◽  
Rf Circuits ◽  
Superior Performance ◽  
Threshold Region ◽  
Lateral Direction ◽  
Subthreshold Region ◽  
Digital Switching ◽  
Rf Performance ◽  
The Impact ◽  
Rf Performances

Abstract This paper explores the potential advantage of surrounded gate junctionless graded channel (SJLGC) MOSFET in the view of its Analog, RF performances using ATLAS TCAD device simulator. The impact of graded channel in the lateral direction on the potential, electric field, and velocity of carriers, energy band along the channel is investigated systematically. The present work mainly emphasises on the superior performance of SJLGC MOSFET by showing higher drain current (ID) , transconductance (gm) ,cut off frequency (fT) , maximum frequency of oscillation (fmax) , critical frequency (fK) .The drain current is improved by 10.03 % in SJLGC MOSFET due to the impact of grading the channel. There is an improvement in fT, fmax, fK by 45%, 29% and 18% respectively in SJLGC MOSFET showing better RF Performance. The dominance of the SJLGC MOSFET over SJL MOSFET is further elucidated by showing 74% improvement in intrinsic voltage gain (gm / gds) indicating its better applications in sub threshold region. But the transconductance generation factor of SJLGC MOSFET is less than SJL MOSFET in the subthreshold region. The intrinsic gate delay (ζD) of SJLGC MOSFET is less in comparison to SJL MOSFET due to the impact of lower gate to gate capacitance (CGG) suggesting better digital switching applications. The simulation results reveal that SJLGC MOSFET can be a competitive contender for the coming generation of RF circuits covering a broad range of operating frequencies in RF spectrum.

scholarly journals Impact of multiple channels on the Characteristics of Rectangular GAA MOSFET

2017 ◽  
Vol 7 (4) ◽  
pp. 1899
Author(s):  
Mohammed Khaouani ◽  
Ahlam Guen-Bouazza
Keyword(s):  
Single Channel ◽  
Numerical Study ◽  
Drain Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel One ◽  
A Value ◽  
Device Structures ◽  
Channel Effects ◽  
The Impact

<p>Square gate all around MOSFETs are a very promising device structures allowing to continue scaling due to their superior control over the short channel effects. In this work a numerical study of a square structure with single channel is compared to a structure with 4 channels in order to highlight the impact of channels number<em> </em>on the device’s DC parameters (drain current and threshold voltage). Our single channel rectangular GAA MOSFET showed reasonable ratio Ion/Ioff of 10<sup>4</sup>, while our four channels GAA MOSFET showed a value of 10<sup>3</sup>. In addition, a low value of drain induced barrier lowering<em> (DIBL) of </em>60mV/V was obtained for our single channel GAA and a lower value of with 40mv/v has been obtained for our four channel one. Also, an extrinsic transconductance of 88ms/µm have been obtained for our four channels GAA compared to the single channel that is equal to 7ms/µm.</p>

scholarly journals Nonlinearity Analysis of Quantum Capacitance and its Effect on Nano-Graphene Field Effect Transistor characteristics

2021 ◽  
Author(s):  
MUNINDRA MUNINDRA ◽  
DEVA NAND
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Charge Carrier Concentration ◽  
Single Layer Graphene ◽  
Quantum Capacitance ◽  
Large Area ◽  
Source Voltage ◽  
Current Calculation ◽  
The Impact

Abstract A simple, compact, and fundamental physics-based quasi-analytic model for Single layer graphene field effect transistors (GFETs) with large area graphene is presented in which the quantum mechanical density gradient method is utilised. The basic device physics of the two-dimensional (2D) graphene channel is studied analytically. This modeling leads to the precise drain current calculation of the GFETs. The drain current calculation for GFETs starts from charge carrier concentration, its density of states and quantum capacitance(QC). QC depends on the channel voltage as a function of gate to source voltage Vgs and drain to source voltage Vds primarily. The formulation of the drain current with velocity saturation has been done by the Monte Carlo simulation method. The performance of the analytical GFETs model is present the precise values of QC, its impact on drain current and transfer as well as output characteristics. The impact of QC at nanometer technology adds the nonlinearity to characteristics curves. The proposed method provides better results as compared with the previous analytical and simulated results.

scholarly journals Output Conductance of Line-TFETs for Different Device Parameters and its Effect on Basic Analog Circuits

2020 ◽  
Vol 15 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Walter Gonçalez Filho ◽  
João Antonio Martino ◽  
Paula Ghedini Der Agopian
Keyword(s):  
Analog Circuits ◽  
Analog Circuit ◽  
Field Effect Transistors ◽  
Drain Current ◽  
Common Source ◽  
Gate Length ◽  
Current Mirrors ◽  
Conduction Mechanisms ◽  
The Impact ◽  
Output Conductance

This work addresses the impact of different device parameters on the analog characteristics of Line-Tunneling Field Effect Transistors (Line-TFETs). Source-to-drain separation, pocket thickness, pocket doping, gate-source alignment and the gate length are varied in order to evaluate their impact on the conduction mechanisms and on the overall transfer characteristics of the device. The variation of the main parameters responsible for device variability (pocket thickness and doping and gate-source alignment) is performed in order to analyze their impact on current mirrors, revealing that gate-source overlap improves the analog characteristics of the Line-TFET and that pocket doping should be limited to values smaller than 1018cm-3. Even though the drain current and the transconductance (gm) of this device are proportional to the gate area, simulations compared to experimental data show that the output conductance (gd) of Line-TFETs is practically independent of the gate length. The conduction mechanisms were analyzed through numerical simulations, revealing that this unique characteristic is due to source-to-drain tunneling, which defines the average value of gd on the saturation-like region and does not depend upon the gate length. The impact of this characteristic on analog circuit design is illustrated considering the example of a common-source stage and comparing its design when using MOSFET devices. This example reveals that the designer may choose whether to increase gm or gd in order to increase the circuit gain when using Line-TFETs, fundamentally differing from the MOSFET design.  

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