Independent-Gate Controlled Asymmetrical SRAM Cells in Double-Gate MOSFET Technology for Improved READ Stability

2006 European Solid-State Device Research Conference ◽

10.1109/essder.2006.307641 ◽

2006 ◽

Cited By ~ 1

Author(s):

Jae-joon Kim ◽

Keunwoo Kim ◽

Ching-te Chuang

Keyword(s):

Double Gate ◽

Double Gate Mosfet ◽

Independent Gate

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Independent-Gate Controlled Asymmetrical SRAM Cells in Double-Gate MOSFET Technology for Improved READ Stability

2006 Proceedings of the 32nd European Solid-State Circuits Conference ◽

10.1109/esscir.2006.307534 ◽

2006 ◽

Cited By ~ 1

Author(s):

Jae-joon Kim ◽

Keunwoo Kim ◽

Ching-te Chuang

Keyword(s):

Double Gate ◽

Double Gate Mosfet ◽

Independent Gate

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Two dimensional analytical subthreshold swing model of a double gate MOSFET with Gate-S/D underlap, asymmetric and independent gate features

2011 International Conference on Electronic Devices, Systems and Applications (ICEDSA) ◽

10.1109/icedsa.2011.5959057 ◽

2011 ◽

Author(s):

Ramesh Vaddi ◽

S. Dasgupta ◽

R.P. Agarwal

Keyword(s):

Subthreshold Swing ◽

Double Gate ◽

Two Dimensional ◽

Double Gate Mosfet ◽

Independent Gate

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A novel high-performance and robust sense amplifier using independent gate control in sub-50-nm double-gate MOSFET

IEEE Transactions on Very Large Scale Integration (VLSI) Systems ◽

10.1109/tvlsi.2005.863743 ◽

2006 ◽

Vol 14 (2) ◽

pp. 183-192 ◽

Cited By ~ 15

Author(s):

S. Mukhopadhyay ◽

H. Mahmoodi ◽

K. Roy

Keyword(s):

High Performance ◽

Double Gate ◽

Sense Amplifier ◽

Double Gate Mosfet ◽

Gate Control ◽

Independent Gate

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Design of High Performance Sense Amplifier Using Independent Gate Control in sub-50nm Double-Gate MOSFET

Sixth International Symposium on Quality of Electronic Design (ISQED'05) ◽

10.1109/isqed.2005.44 ◽

2005 ◽

Cited By ~ 15

Author(s):

S. Mukhopadhyay ◽

H. Mahmoodi ◽

K. Roy

Keyword(s):

High Performance ◽

Double Gate ◽

Sense Amplifier ◽

Double Gate Mosfet ◽

Gate Control ◽

Independent Gate

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Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes

9th International Symposium on Quality Electronic Design (isqed 2008) ◽

10.1109/isqed.2008.4479738 ◽

2008 ◽

Author(s):

Feng Liu ◽

Jin He ◽

Yue Fu ◽

Jinhua Hu ◽

Wei Bian ◽

...

Keyword(s):

Core Model ◽

Double Gate ◽

Gate Operation ◽

Operation Modes ◽

Double Gate Mosfet ◽

Independent Gate

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The impact of high-k gate dielectric on Junctionless Vertical Double Gate MOSFET

International Journal of Computer Sciences and Engineering ◽

10.26438/ijcse/v6i6.14751478 ◽

2018 ◽

Vol 6 (6) ◽

pp. 1475-1478

Author(s):

Jagdeep Rahul

Keyword(s):

Gate Dielectric ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

The Impact ◽

High K Gate Dielectric

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Analysis on Variations of Metal Gate Work Function on Junctionless Double Gate MOSFET with High-k Spacers

2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3) ◽

10.1109/iconc345789.2020.9117425 ◽

2020 ◽

Author(s):

Gaurav Dhiman ◽

Rajeev Pourush

Keyword(s):

Work Function ◽

Double Gate ◽

Metal Gate ◽

High K ◽

Double Gate Mosfet ◽

Gate Work Function

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Advantage of carbon nannotube field effect transistor (CNTFET) over double-gate MOSFET in nanometre regime

2012 NATIONAL CONFERENCE ON COMPUTING AND COMMUNICATION SYSTEMS ◽

10.1109/ncccs.2012.6412983 ◽

2012 ◽

Cited By ~ 2

Author(s):

Sanjeet Kumar Sinha ◽

Saurabh Chaudhury

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Double Gate Mosfet ◽

Effect Transistor

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An explicit analytical charge-based model of undoped independent double gate MOSFET

Solid-State Electronics ◽

10.1016/j.sse.2006.05.019 ◽

2006 ◽

Vol 50 (7-8) ◽

pp. 1276-1282 ◽

Cited By ~ 25

Author(s):

Marina Reyboz ◽

Olivier Rozeau ◽

Thierry Poiroux ◽

Patrick Martin ◽

Jalal Jomaah

Keyword(s):

Double Gate ◽

Double Gate Mosfet

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Computing Surface Potential and Drain Current in Nanometric Double-Gate MOSFET Using Ortiz-Conde Model

Advances in Intelligent Systems and Computing - Contemporary Advances in Innovative and Applicable Information Technology ◽

10.1007/978-981-13-1540-4_5 ◽

2018 ◽

pp. 41-47

Author(s):

Krishnendu Roy ◽

Anal Roy Chowdhury ◽

Arpan Deyasi ◽

Angsuman Sarkar

Keyword(s):

Surface Potential ◽

Drain Current ◽

Double Gate ◽

Double Gate Mosfet

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