Dynamical properties of semiconductor lasers subject to optoelectronic feedback and bidirectional coupling

2003 ◽  
Author(s):  
R. Vicente ◽  
J. Mulet ◽  
C.R. Mirasso ◽  
Shuo Tang ◽  
Jia-Ming Liu
Keyword(s):  
Semiconductor Lasers ◽  
Bidirectional Coupling ◽  
Dynamical Properties

scholarly journals Dynamical properties of mutually delayed coupled semiconductor lasers

2004 ◽  
Author(s):  
Hartmut Erzgraber ◽  
Daan Lenstra ◽  
Bernd Krauskopf ◽  
Ingo Fischer
Keyword(s):  
Semiconductor Lasers ◽  
Dynamical Properties ◽  
Coupled Semiconductor

Dynamical properties of two semiconductor lasers with bidirectional optoelectronic coupling

2003 ◽  
Author(s):  
Rßul Vicente ◽  
Josep Mulet ◽  
Claudio R. Mirasso ◽  
Shuo Tang ◽  
Jiaming Liu
Keyword(s):  
Semiconductor Lasers ◽  
Dynamical Properties

Transition from unidirectional to delayed bidirectional coupling in optically coupled semiconductor lasers

2012 ◽  
Vol 85 (2) ◽  
Author(s):  
Cristian Bonatto ◽  
Bryan Kelleher ◽  
Guillaume Huyet ◽  
Stephen P. Hegarty
Keyword(s):  
Semiconductor Lasers ◽  
Bidirectional Coupling ◽  
Coupled Semiconductor

From the Oort cloud to Halley-type comets

1999 ◽  
Vol 173 ◽  
pp. 327-338 ◽  
Author(s):  
J.A. Fernández ◽  
T. Gallardo
Keyword(s):  
Total Population ◽  
Complex Function ◽  
Dynamical Evolution ◽  
Oort Cloud ◽  
Capture Process ◽  
Influx Rate ◽  
Short Period ◽  
Dynamical Properties ◽  
Orbital Periods ◽  
Probability Of Capture

AbstractThe Oort cloud probably is the source of Halley-type (HT) comets and perhaps of some Jupiter-family (JF) comets. The process of capture of Oort cloud comets into HT comets by planetary perturbations and its efficiency are very important problems in comet ary dynamics. A small fraction of comets coming from the Oort cloud − of about 10−2− are found to become HT comets (orbital periods < 200 yr). The steady-state population of HT comets is a complex function of the influx rate of new comets, the probability of capture and their physical lifetimes. From the discovery rate of active HT comets, their total population can be estimated to be of a few hundreds for perihelion distancesq <2 AU. Randomly-oriented LP comets captured into short-period orbits (orbital periods < 20 yr) show dynamical properties that do not match the observed properties of JF comets, in particular the distribution of their orbital inclinations, so Oort cloud comets can be ruled out as a suitable source for most JF comets. The scope of this presentation is to review the capture process of new comets into HT and short-period orbits, including the possibility that some of them may become sungrazers during their dynamical evolution.

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

A Unified Approach to Study the Thermal Dynamics in Multilongitudinal Mode Semiconductor Lasers

2001 ◽  
Vol 20 (2) ◽  
pp. 159-169 ◽  
Author(s):  
M. Ganesh Madhan ◽  
P. R. Vaya ◽  
N. Gunasekaran
Keyword(s):  
Semiconductor Lasers ◽  
Unified Approach ◽  
Thermal Dynamics
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