Theory of ultrafast plasma expansion via stimulated emission in direct band gap semiconductors

2005 ◽  
Author(s):  
Yu.D. Kalafati ◽  
V.A. Kokin
Keyword(s):  
Band Gap ◽  
Stimulated Emission ◽  
Plasma Expansion ◽  
Direct Band Gap ◽  
Direct Band

scholarly journals Stimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se2 Direct Band Gap Semiconductors

2018 ◽  
Vol 85 (2) ◽  
pp. 267-273
Author(s):  
I. E. Svitsiankou ◽  
V. N. Pavlovskii ◽  
E. V. Lutsenko ◽  
G. P. Yablonskii ◽  
A. V. Mudryi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Solid Solutions ◽  
Stimulated Emission ◽  
Direct Band Gap ◽  
Direct Band

Electron-hole plasma expansion in the direct-band-gap semiconductors CdS and CdSe

1985 ◽  
Vol 32 (4) ◽  
pp. 2407-2418 ◽  
Author(s):  
F. A. Majumder ◽  
H.-E. Swoboda ◽  
K. Kempf ◽  
C. Klingshirn
Keyword(s):  
Band Gap ◽  
Plasma Expansion ◽  
Electron Hole ◽  
Direct Band Gap ◽  
Hole Plasma ◽  
Electron Hole Plasma ◽  
Direct Band

Measurement of the pressure dependence of the direct band gap of In0.53Ga0.47As using stimulated emission

1988 ◽  
Vol 52 (25) ◽  
pp. 2124-2126 ◽  
Author(s):  
R. People ◽  
A. Jayaraman ◽  
K. W. Wecht ◽  
D. L. Sivco ◽  
A. Y. Cho
Keyword(s):  
Band Gap ◽  
Pressure Dependence ◽  
Stimulated Emission ◽  
Direct Band Gap ◽  
Direct Band

Optical Studies of Poly (N-Carbazole) (PVK) Blending with Polyvinylpyrrolidone (PVP) Using Tauc/Davis-Mott Model

2013 ◽  
Vol 652-654 ◽  
pp. 527-531 ◽  
Author(s):  
A.N. Alias ◽  
T.I. Tunku Kudin ◽  
Z.M. Zabidi ◽  
M.K. Harun ◽  
Ab Malik Marwan Ali ◽  
...  
Keyword(s):  
Band Gap ◽  
Urbach Energy ◽  
Quartz Substrate ◽  
Optical Studies ◽  
Direct Band Gap ◽  
Mott Model ◽  
Blended Polymer ◽  
Electronic Parameters ◽  
Direct Band ◽  
Indirect Band Gap

The optical absorption spectra of blended poly (N-carbazole) (PVK) with polyvinylpyrrolidone (PVP) in various compositions are investigated. A doctor blade technique was used to coat the blended polymer on a quartz substrate. The electronic parameters such as absorption edge (Ee), allowed direct band gap (Ed), allowed indirect band gap (Ei), Urbach edge (Eu) and steepness parameter (γ) were calculated using Tauc/Davis-Mott Model. The results reveal that the Ee, Ed and Ei increase with increasing of PVP ratio. There also have variation changing in Urbach energy and steepness parameter.

Theoretical Derivations of a Direct Band Gap Semiconductor of SiC Doped with Ge

2014 ◽  
Vol 44 (1) ◽  
pp. 167-176 ◽  
Author(s):  
Adit Ghosh ◽  
Chandrika Varadachari
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band

Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions

2015 ◽  
Vol 54 (10) ◽  
pp. 3112-3115 ◽  
Author(s):  
Shengli Zhang ◽  
Zhong Yan ◽  
Yafei Li ◽  
Zhongfang Chen ◽  
Haibo Zeng
Keyword(s):  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band
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