Fabrication of Die Embedded Substrate and Mechanical Stress Evaluation at Active Area of the Embedded Die

Author(s):  
Doohwan Lee ◽  
Seunggu Kim ◽  
Moonil Kim ◽  
Onecheol Bae ◽  
Kwankyu Kim ◽  
...  
1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.


2005 ◽  
Vol 2005.1 (0) ◽  
pp. 419-420
Author(s):  
Hideki NIIMI ◽  
Hirohisa KIMACHI ◽  
Tomohisa NAKAYAMA ◽  
Keisuke TANAKA

2004 ◽  
Vol 272-276 ◽  
pp. E535-E537
Author(s):  
Lode Vandenbossche ◽  
Luc Dupré ◽  
Marc De Wulf ◽  
Jan Melkebeek

2003 ◽  
Vol 112 ◽  
pp. 943-946 ◽  
Author(s):  
K. Koho ◽  
J. Vimpari ◽  
L. Straka ◽  
N. Lanska ◽  
O. Sôderberg ◽  
...  
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