A stochastic framework for spot-scanning particle therapy

2016 ◽  
Author(s):  
Marc Robini ◽  
Yuemin Zhu ◽  
Wanyu Liu ◽  
Isabelle Magnin
Keyword(s):  
Particle Therapy ◽  
Spot Scanning ◽  
Stochastic Framework

scholarly journals EP-1982 Pancoast tumours. A good candidate for proton spot scanning?

2019 ◽  
Vol 133 ◽  
pp. S1082
Author(s):  
D. Sloth Møller ◽  
L. Hoffmann ◽  
M. Josipovic ◽  
A.K. Berthelsen ◽  
G. Persson
Keyword(s):  
Spot Scanning

scholarly journals FRED: a fast Monte Carlo code on GPU for quality control in Particle Therapy

2020 ◽  
Vol 1548 ◽  
pp. 012020
Author(s):  
M De Simoni ◽  
M Fischetti ◽  
E Gioscio ◽  
M Marafini ◽  
R Mirabelli ◽  
...  
Keyword(s):  
Quality Control ◽  
Monte Carlo ◽  
Particle Therapy ◽  
Monte Carlo Code

Stochastic framework for peak demand reduction opportunities with solar energy for manufacturing facilities

2021 ◽  
pp. 127891
Author(s):  
Miguel A. Peinado-Guerrero ◽  
Jesus R. Villalobos ◽  
Patrick E. Phelan ◽  
Nicolas A. Campbell
Keyword(s):  
Solar Energy ◽  
Peak Demand ◽  
Demand Reduction ◽  
Stochastic Framework ◽  
Manufacturing Facilities

scholarly journals A Stochastic Model to Describe the Scattering in the Response of Polysilicon MEMS

2021 ◽  
Vol 2 (1) ◽  
pp. 95
Author(s):  
Luca Dassi ◽  
Marco Merola ◽  
Eleonora Riva ◽  
Angelo Santalucia ◽  
Andrea Venturelli ◽  
...  
Keyword(s):  
Silicon Film ◽  
Micro Fabrication ◽  
Micro Electro Mechanical Systems ◽  
Local Fluctuations ◽  
Stochastic Framework ◽  
On Line ◽  
Chip Testing ◽  
On Chip ◽  
Time Required ◽  
Polycrystalline Silicon Film

The current miniaturization trend in the market of inertial microsystems is leading to movable device parts with sizes comparable to the characteristic length-scale of the polycrystalline silicon film morphology. The relevant output of micro electro-mechanical systems (MEMS) is thus more and more affected by a scattering, induced by features resulting from the micro-fabrication process. We recently proposed an on-chip testing device, specifically designed to enhance the aforementioned scattering in compliance with fabrication constraints. We proved that the experimentally measured scattering cannot be described by allowing only for the morphology-affected mechanical properties of the silicon films, and etch defects must be properly accounted for too. In this work, we discuss a fully stochastic framework allowing for the local fluctuations of the stiffness and of the etch-affected geometry of the silicon film. The provided semi-analytical solution is shown to catch efficiently the measured scattering in the C-V plots collected through the test structure. This approach opens up the possibility to learn on-line specific features of the devices, and to reduce the time required for their calibration.

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